Growth of SnSe structures by the ALD method using Et₄Sn and H₂Se as precursors has been investigated. It was established that coverage occurs at a temperature above 250 °C and the morphology of the layer depends on the temperature. At 350 °C we have grown sphere-shaped particles 100-200 nm in diameter completely covering the substrate in one monolayer. For samples grown at 450 °C petal-shaped crystal islands were observed. The IR spectrum of SnSe grown at 350 °C shows a small shift (∼0.20 _eV) of the room-temperature band gap energy.