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Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition. / Büttner, Pascal; Scheler, Florian; Pointer, Craig; Döhler, Dirk; Barr, Maïssa K.S.; Koroleva, Aleksandra; Pankin, Dmitrii; Hatada, Ruriko; Flege, Stefan; Manshina, Alina; Young, Elizabeth R.; Mínguez-Bacho, Ignacio; Bachmann, Julien.

в: ACS Applied Energy Materials, Том 2, № 12, 01.01.2019, стр. 8747-8756.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Büttner, P, Scheler, F, Pointer, C, Döhler, D, Barr, MKS, Koroleva, A, Pankin, D, Hatada, R, Flege, S, Manshina, A, Young, ER, Mínguez-Bacho, I & Bachmann, J 2019, 'Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition', ACS Applied Energy Materials, Том. 2, № 12, стр. 8747-8756. https://doi.org/10.1021/acsaem.9b01721

APA

Büttner, P., Scheler, F., Pointer, C., Döhler, D., Barr, M. K. S., Koroleva, A., Pankin, D., Hatada, R., Flege, S., Manshina, A., Young, E. R., Mínguez-Bacho, I., & Bachmann, J. (Принято в печать). Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition. ACS Applied Energy Materials, 2(12), 8747-8756. https://doi.org/10.1021/acsaem.9b01721

Vancouver

Büttner P, Scheler F, Pointer C, Döhler D, Barr MKS, Koroleva A и пр. Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition. ACS Applied Energy Materials. 2019 Янв. 1;2(12):8747-8756. https://doi.org/10.1021/acsaem.9b01721

Author

Büttner, Pascal ; Scheler, Florian ; Pointer, Craig ; Döhler, Dirk ; Barr, Maïssa K.S. ; Koroleva, Aleksandra ; Pankin, Dmitrii ; Hatada, Ruriko ; Flege, Stefan ; Manshina, Alina ; Young, Elizabeth R. ; Mínguez-Bacho, Ignacio ; Bachmann, Julien. / Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition. в: ACS Applied Energy Materials. 2019 ; Том 2, № 12. стр. 8747-8756.

BibTeX

@article{da171553fad0489b8f93f6793e87b4af,
title = "Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition",
abstract = "The combination of oxide and heavier chalcogenide layers in thin film photovoltaics suffers limitations associated with oxygen incorporation and sulfur deficiency in the chalcogenide layer or with a chemical incompatibility which results in dewetting issues and defect states at the interface. Here, we establish atomic layer deposition (ALD) as a tool to overcome these limitations. ALD allows one to obtain highly pure Sb2S3 light absorber layers, and we exploit this technique to generate an additional interfacial layer consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves dewetting and passivates defect states at the interface. We demonstrate via transient absorption spectroscopy that interfacial electron recombination is one order of magnitude slower at the ZnS-engineered interface than hole recombination at the Sb2S3/P3HT interface. The comparison of solar cells with and without oxide incorporation in Sb2S3, with and without the ultrathin ZnS interlayer, and with systematically varied Sb2S3 thickness provides a complete picture of the physical processes at work in the devices.",
keywords = "antimony sulfide, atomic layer deposition, extremely thin absorber, interfacial layer, transient absorption, ultrathin layer",
author = "Pascal B{\"u}ttner and Florian Scheler and Craig Pointer and Dirk D{\"o}hler and Barr, {Ma{\"i}ssa K.S.} and Aleksandra Koroleva and Dmitrii Pankin and Ruriko Hatada and Stefan Flege and Alina Manshina and Young, {Elizabeth R.} and Ignacio M{\'i}nguez-Bacho and Julien Bachmann",
year = "2019",
month = jan,
day = "1",
doi = "10.1021/acsaem.9b01721",
language = "English",
volume = "2",
pages = "8747--8756",
journal = "ACS Applied Energy Materials",
issn = "2574-0962",
publisher = "American Chemical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition

AU - Büttner, Pascal

AU - Scheler, Florian

AU - Pointer, Craig

AU - Döhler, Dirk

AU - Barr, Maïssa K.S.

AU - Koroleva, Aleksandra

AU - Pankin, Dmitrii

AU - Hatada, Ruriko

AU - Flege, Stefan

AU - Manshina, Alina

AU - Young, Elizabeth R.

AU - Mínguez-Bacho, Ignacio

AU - Bachmann, Julien

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The combination of oxide and heavier chalcogenide layers in thin film photovoltaics suffers limitations associated with oxygen incorporation and sulfur deficiency in the chalcogenide layer or with a chemical incompatibility which results in dewetting issues and defect states at the interface. Here, we establish atomic layer deposition (ALD) as a tool to overcome these limitations. ALD allows one to obtain highly pure Sb2S3 light absorber layers, and we exploit this technique to generate an additional interfacial layer consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves dewetting and passivates defect states at the interface. We demonstrate via transient absorption spectroscopy that interfacial electron recombination is one order of magnitude slower at the ZnS-engineered interface than hole recombination at the Sb2S3/P3HT interface. The comparison of solar cells with and without oxide incorporation in Sb2S3, with and without the ultrathin ZnS interlayer, and with systematically varied Sb2S3 thickness provides a complete picture of the physical processes at work in the devices.

AB - The combination of oxide and heavier chalcogenide layers in thin film photovoltaics suffers limitations associated with oxygen incorporation and sulfur deficiency in the chalcogenide layer or with a chemical incompatibility which results in dewetting issues and defect states at the interface. Here, we establish atomic layer deposition (ALD) as a tool to overcome these limitations. ALD allows one to obtain highly pure Sb2S3 light absorber layers, and we exploit this technique to generate an additional interfacial layer consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves dewetting and passivates defect states at the interface. We demonstrate via transient absorption spectroscopy that interfacial electron recombination is one order of magnitude slower at the ZnS-engineered interface than hole recombination at the Sb2S3/P3HT interface. The comparison of solar cells with and without oxide incorporation in Sb2S3, with and without the ultrathin ZnS interlayer, and with systematically varied Sb2S3 thickness provides a complete picture of the physical processes at work in the devices.

KW - antimony sulfide

KW - atomic layer deposition

KW - extremely thin absorber

KW - interfacial layer

KW - transient absorption

KW - ultrathin layer

UR - http://www.scopus.com/inward/record.url?scp=85076632981&partnerID=8YFLogxK

U2 - 10.1021/acsaem.9b01721

DO - 10.1021/acsaem.9b01721

M3 - Article

AN - SCOPUS:85076632981

VL - 2

SP - 8747

EP - 8756

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

SN - 2574-0962

IS - 12

ER -

ID: 50450381