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THRESHOLD BEHAVIOR OF THE FORMATION OF NANOMETER ISLANDS IN A GE/SI(100) SYSTEM IN THE PRESENCE OF SB. / Cirlin, G.E.; Tonkikh, A.A.; Dubrovski, V.G.; Ustinov, V.M.; Werner, P.; Sibirev, N.V.
In:
Semiconductors, Vol. 39, No. 5, 2005, p. 547-551.
Research output: Contribution to journal › Article
Harvard
Cirlin, GE, Tonkikh, AA, Dubrovski, VG, Ustinov, VM, Werner, P
& Sibirev, NV 2005, '
THRESHOLD BEHAVIOR OF THE FORMATION OF NANOMETER ISLANDS IN A GE/SI(100) SYSTEM IN THE PRESENCE OF SB',
Semiconductors, vol. 39, no. 5, pp. 547-551.
APA
Cirlin, G. E., Tonkikh, A. A., Dubrovski, V. G., Ustinov, V. M., Werner, P.
, & Sibirev, N. V. (2005).
THRESHOLD BEHAVIOR OF THE FORMATION OF NANOMETER ISLANDS IN A GE/SI(100) SYSTEM IN THE PRESENCE OF SB.
Semiconductors,
39(5), 547-551.
Vancouver
Author
BibTeX
@article{ee24e5bc247b459b9ce65a9a1967fa1b,
title = "THRESHOLD BEHAVIOR OF THE FORMATION OF NANOMETER ISLANDS IN A GE/SI(100) SYSTEM IN THE PRESENCE OF SB",
author = "G.E. Cirlin and A.A. Tonkikh and V.G. Dubrovski and V.M. Ustinov and P. Werner and N.V. Sibirev",
year = "2005",
language = "English",
volume = "39",
pages = "547--551",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "5",
}
RIS
TY - JOUR
T1 - THRESHOLD BEHAVIOR OF THE FORMATION OF NANOMETER ISLANDS IN A GE/SI(100) SYSTEM IN THE PRESENCE OF SB
AU - Cirlin, G.E.
AU - Tonkikh, A.A.
AU - Dubrovski, V.G.
AU - Ustinov, V.M.
AU - Werner, P.
AU - Sibirev, N.V.
PY - 2005
Y1 - 2005
M3 - Article
VL - 39
SP - 547
EP - 551
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 5
ER -
