THRESHOLD BEHAVIOR OF THE FORMATION OF NANOMETER ISLANDS IN A GE/SI(100) SYSTEM IN THE PRESENCE OF SB › SPbU Researchers Portal

THRESHOLD BEHAVIOR OF THE FORMATION OF NANOMETER ISLANDS IN A GE/SI(100) SYSTEM IN THE PRESENCE OF SB

Research output: Contribution to journal › Article

G.E. Cirlin
A.A. Tonkikh
V.G. Dubrovski
V.M. Ustinov
P. Werner
N.V. Sibirev

Original language	English
Pages (from-to)	547-551
Journal	Semiconductors
Volume	39
Issue number	5
State	Published - 2005
Externally published	Yes

ID: 5302677