Standard

Thick β-Ga2O3 homoepitaxial films grown on (2¯01) substrate by mist-CVD. / Butenko, P.n.; Timashov, R.b.; Boiko, M.e.; Guzilova, L.i.; Shapenkov, S.v.; Sharkov, M.d.; Sergienko, E.s.; Stepanov, A.i.; Nikolaev, V.i.

In: Materials Today Communications, Vol. 41, 110970, 01.12.2024.

Research output: Contribution to journal › Article › peer-review

Harvard

Butenko, PN, Timashov, RB, Boiko, ME, Guzilova, LI, Shapenkov, SV, Sharkov, MD, Sergienko, ES, Stepanov, AI & Nikolaev, VI 2024, 'Thick β-Ga2O3 homoepitaxial films grown on (2¯01) substrate by mist-CVD', Materials Today Communications, vol. 41, 110970. https://doi.org/10.1016/j.mtcomm.2024.110970

APA

Butenko, P. N., Timashov, R. B., Boiko, M. E., Guzilova, L. I., Shapenkov, S. V., Sharkov, M. D., Sergienko, E. S., Stepanov, A. I., & Nikolaev, V. I. (2024). Thick β-Ga2O3 homoepitaxial films grown on (2¯01) substrate by mist-CVD. Materials Today Communications, 41, [110970]. https://doi.org/10.1016/j.mtcomm.2024.110970

Vancouver

Butenko PN, Timashov RB, Boiko ME, Guzilova LI, Shapenkov SV, Sharkov MD et al. Thick β-Ga2O3 homoepitaxial films grown on (2¯01) substrate by mist-CVD. Materials Today Communications. 2024 Dec 1;41. 110970. https://doi.org/10.1016/j.mtcomm.2024.110970

Author

Butenko, P.n. ; Timashov, R.b. ; Boiko, M.e. ; Guzilova, L.i. ; Shapenkov, S.v. ; Sharkov, M.d. ; Sergienko, E.s. ; Stepanov, A.i. ; Nikolaev, V.i. / Thick β-Ga2O3 homoepitaxial films grown on (2¯01) substrate by mist-CVD. In: Materials Today Communications. 2024 ; Vol. 41.

BibTeX

@article{749f33855e41463fa2ce550625f8eef4,
title = "Thick β-Ga2O3 homoepitaxial films grown on (2¯01) substrate by mist-CVD",
abstract = "Thick β-Ga2O3 homoepitaxial films have been grown on (2¯01) commercial substrates by mist-CVD with gallium acetylacetonate precursor for the first time. The growth rate of about 2 μm/h has been reached, which is unavailable for any other known epitaxial technique. The layer is characterized by the constant thickness and reasonable structure quality due to low stressed interface.",
keywords = "Homoepitaxial films, Mist-CVD, Monoclinic gallium oxide, β-Ga2O3",
author = "P.n. Butenko and R.b. Timashov and M.e. Boiko and L.i. Guzilova and S.v. Shapenkov and M.d. Sharkov and E.s. Sergienko and A.i. Stepanov and V.i. Nikolaev",
year = "2024",
month = dec,
day = "1",
doi = "10.1016/j.mtcomm.2024.110970",
language = "English",
volume = "41",
journal = "Materials Today Communications",
issn = "2352-4928",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Thick β-Ga2O3 homoepitaxial films grown on (2¯01) substrate by mist-CVD

AU - Butenko, P.n.

AU - Timashov, R.b.

AU - Boiko, M.e.

AU - Guzilova, L.i.

AU - Shapenkov, S.v.

AU - Sharkov, M.d.

AU - Sergienko, E.s.

AU - Stepanov, A.i.

AU - Nikolaev, V.i.

PY - 2024/12/1

Y1 - 2024/12/1

N2 - Thick β-Ga2O3 homoepitaxial films have been grown on (2¯01) commercial substrates by mist-CVD with gallium acetylacetonate precursor for the first time. The growth rate of about 2 μm/h has been reached, which is unavailable for any other known epitaxial technique. The layer is characterized by the constant thickness and reasonable structure quality due to low stressed interface.

AB - Thick β-Ga2O3 homoepitaxial films have been grown on (2¯01) commercial substrates by mist-CVD with gallium acetylacetonate precursor for the first time. The growth rate of about 2 μm/h has been reached, which is unavailable for any other known epitaxial technique. The layer is characterized by the constant thickness and reasonable structure quality due to low stressed interface.

KW - Homoepitaxial films

KW - Mist-CVD

KW - Monoclinic gallium oxide

KW - β-Ga2O3

UR - https://www.mendeley.com/catalogue/a5aa89c7-f1ac-3abf-bd3d-4724406a73af/

U2 - 10.1016/j.mtcomm.2024.110970

DO - 10.1016/j.mtcomm.2024.110970

M3 - Article

VL - 41

JO - Materials Today Communications

JF - Materials Today Communications

SN - 2352-4928

M1 - 110970

ER -

ID: 127167304