Research output: Contribution to journal › Conference article › peer-review
This work demonstrates the possibility of using a silicon substrate with nanoscale buffer layer of silicon carbide for growth of GaN nanowires by molecular epitaxy on. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.
Original language | English |
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Article number | 012027 |
Journal | Journal of Physics: Conference Series |
Volume | 741 |
Issue number | 1 |
DOIs | |
State | Published - 15 Sep 2016 |
Event | 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016 - St Petersburg, Russian Federation Duration: 28 Mar 2016 → 30 Mar 2016 |
ID: 99723391