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The Hanle Effect in Nonuniformly Doped GaAs. / Dzhioev, R. I.; Zakharchenya, B. P.; Kavokin, K. V.; Lazarev, M. V.

In: Physics of the Solid State, Vol. 45, No. 12, 01.12.2003, p. 2255-2263.

Research output: Contribution to journal › Article › peer-review

Harvard

Dzhioev, RI, Zakharchenya, BP, Kavokin, KV & Lazarev, MV 2003, 'The Hanle Effect in Nonuniformly Doped GaAs', Physics of the Solid State, vol. 45, no. 12, pp. 2255-2263. https://doi.org/10.1134/1.1635494

APA

Dzhioev, R. I., Zakharchenya, B. P., Kavokin, K. V., & Lazarev, M. V. (2003). The Hanle Effect in Nonuniformly Doped GaAs. Physics of the Solid State, 45(12), 2255-2263. https://doi.org/10.1134/1.1635494

Vancouver

Dzhioev RI, Zakharchenya BP, Kavokin KV, Lazarev MV. The Hanle Effect in Nonuniformly Doped GaAs. Physics of the Solid State. 2003 Dec 1;45(12):2255-2263. https://doi.org/10.1134/1.1635494

Author

Dzhioev, R. I. ; Zakharchenya, B. P. ; Kavokin, K. V. ; Lazarev, M. V. / The Hanle Effect in Nonuniformly Doped GaAs. In: Physics of the Solid State. 2003 ; Vol. 45, No. 12. pp. 2255-2263.

BibTeX

@article{23f09c87aacf449fa26303bad1d3a24d,
title = "The Hanle Effect in Nonuniformly Doped GaAs",
abstract = "Spin density distribution in the GaAs/AlGaAs heterostructure was studied under steady-state optical orientation conditions. A comprehensive analysis of the dynamics and relaxation processes responsible for the steady-state nonuniformity of spin orientation was made. The acceptor impurity concentrations in various regions of nonuniformly doped gallium arsenide were determined. The concentrations were derived from the spin relaxation times measured using the optical orientation method.",
author = "Dzhioev, {R. I.} and Zakharchenya, {B. P.} and Kavokin, {K. V.} and Lazarev, {M. V.}",
year = "2003",
month = dec,
day = "1",
doi = "10.1134/1.1635494",
language = "English",
volume = "45",
pages = "2255--2263",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "12",

}

RIS

TY - JOUR

T1 - The Hanle Effect in Nonuniformly Doped GaAs

AU - Dzhioev, R. I.

AU - Zakharchenya, B. P.

AU - Kavokin, K. V.

AU - Lazarev, M. V.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Spin density distribution in the GaAs/AlGaAs heterostructure was studied under steady-state optical orientation conditions. A comprehensive analysis of the dynamics and relaxation processes responsible for the steady-state nonuniformity of spin orientation was made. The acceptor impurity concentrations in various regions of nonuniformly doped gallium arsenide were determined. The concentrations were derived from the spin relaxation times measured using the optical orientation method.

AB - Spin density distribution in the GaAs/AlGaAs heterostructure was studied under steady-state optical orientation conditions. A comprehensive analysis of the dynamics and relaxation processes responsible for the steady-state nonuniformity of spin orientation was made. The acceptor impurity concentrations in various regions of nonuniformly doped gallium arsenide were determined. The concentrations were derived from the spin relaxation times measured using the optical orientation method.

UR - http://www.scopus.com/inward/record.url?scp=0346307494&partnerID=8YFLogxK

U2 - 10.1134/1.1635494

DO - 10.1134/1.1635494

M3 - Article

AN - SCOPUS:0346307494

VL - 45

SP - 2255

EP - 2263

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 12

ER -

ID: 39913016