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The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate. / Reznik, R. R.; Shtrom, I. V.; Samsonenko, Yu B.; Khrebtov, A. I.; Soshnikov, I. P.; Cirlin, G. E.

In: Journal of Physics: Conference Series, Vol. 929, No. 1, 012047, 27.11.2017.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Reznik, RR, Shtrom, IV, Samsonenko, YB, Khrebtov, AI, Soshnikov, IP & Cirlin, GE 2017, 'The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate', Journal of Physics: Conference Series, vol. 929, no. 1, 012047. https://doi.org/10.1088/1742-6596/929/1/012047

APA

Reznik, R. R., Shtrom, I. V., Samsonenko, Y. B., Khrebtov, A. I., Soshnikov, I. P., & Cirlin, G. E. (2017). The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate. Journal of Physics: Conference Series, 929(1), [012047]. https://doi.org/10.1088/1742-6596/929/1/012047

Vancouver

Reznik RR, Shtrom IV, Samsonenko YB, Khrebtov AI, Soshnikov IP, Cirlin GE. The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate. Journal of Physics: Conference Series. 2017 Nov 27;929(1). 012047. https://doi.org/10.1088/1742-6596/929/1/012047

Author

Reznik, R. R. ; Shtrom, I. V. ; Samsonenko, Yu B. ; Khrebtov, A. I. ; Soshnikov, I. P. ; Cirlin, G. E. / The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate. In: Journal of Physics: Conference Series. 2017 ; Vol. 929, No. 1.

BibTeX

@article{422da223d55149b8b412458100041283,
title = "The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate",
abstract = "The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform.",
author = "Reznik, {R. R.} and Shtrom, {I. V.} and Samsonenko, {Yu B.} and Khrebtov, {A. I.} and Soshnikov, {I. P.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; International Conference PhysicA.SPb 2016 ; Conference date: 01-11-2016 Through 03-11-2016",
year = "2017",
month = nov,
day = "27",
doi = "10.1088/1742-6596/929/1/012047",
language = "English",
volume = "929",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate

AU - Reznik, R. R.

AU - Shtrom, I. V.

AU - Samsonenko, Yu B.

AU - Khrebtov, A. I.

AU - Soshnikov, I. P.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2017/11/27

Y1 - 2017/11/27

N2 - The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform.

AB - The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform.

UR - http://www.scopus.com/inward/record.url?scp=85039063902&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/929/1/012047

DO - 10.1088/1742-6596/929/1/012047

M3 - Conference article

AN - SCOPUS:85039063902

VL - 929

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012047

T2 - International Conference PhysicA.SPb 2016

Y2 - 1 November 2016 through 3 November 2016

ER -

ID: 99720798