The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate

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The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate. / Reznik, R. R.; Shtrom, I. V.; Samsonenko, Yu B.; Khrebtov, A. I.; Soshnikov, I. P.; Cirlin, G. E.

In: Journal of Physics: Conference Series, Vol. 929, No. 1, 012047, 27.11.2017.

Research output: Contribution to journal › Conference article › peer-review

Author

Reznik, R. R. ; Shtrom, I. V. ; Samsonenko, Yu B. ; Khrebtov, A. I. ; Soshnikov, I. P. ; Cirlin, G. E. / The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate. In: Journal of Physics: Conference Series. 2017 ; Vol. 929, No. 1.

BibTeX

@article{422da223d55149b8b412458100041283,

title = "The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate",

abstract = "The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform.",

author = "Reznik, {R. R.} and Shtrom, {I. V.} and Samsonenko, {Yu B.} and Khrebtov, {A. I.} and Soshnikov, {I. P.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; International Conference PhysicA.SPb 2016 ; Conference date: 01-11-2016 Through 03-11-2016",

year = "2017",

month = nov,

day = "27",

doi = "10.1088/1742-6596/929/1/012047",

language = "English",

volume = "929",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

RIS

TY - JOUR

T1 - The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate

AU - Reznik, R. R.

AU - Shtrom, I. V.

AU - Samsonenko, Yu B.

AU - Khrebtov, A. I.

AU - Soshnikov, I. P.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2017/11/27

Y1 - 2017/11/27

N2 - The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform.

AB - The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform.

UR - http://www.scopus.com/inward/record.url?scp=85039063902&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/929/1/012047

DO - 10.1088/1742-6596/929/1/012047

M3 - Conference article

AN - SCOPUS:85039063902

VL - 929

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012047

T2 - International Conference PhysicA.SPb 2016

Y2 - 1 November 2016 through 3 November 2016

ER -

ID: 99720798