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Synthesis of Morphologically Developed InGaN Nanostructures on Silicon : Influence of the Substrate Temperature on the Morphological and Optical Properties. / Reznik, R. R.; Gridchin, V. O.; Kotlyar, K. P.; Kryzhanovskaya, N. V.; Morozov, S. V.; Cirlin, G. E.

In: Semiconductors, Vol. 54, No. 9, 01.09.2020, p. 1075-1077.

Research output: Contribution to journal › Article › peer-review

Harvard

Reznik, RR, Gridchin, VO, Kotlyar, KP, Kryzhanovskaya, NV, Morozov, SV & Cirlin, GE 2020, 'Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties', Semiconductors, vol. 54, no. 9, pp. 1075-1077. https://doi.org/10.1134/S1063782620090237

APA

Reznik, R. R., Gridchin, V. O., Kotlyar, K. P., Kryzhanovskaya, N. V., Morozov, S. V., & Cirlin, G. E. (2020). Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties. Semiconductors, 54(9), 1075-1077. https://doi.org/10.1134/S1063782620090237

Vancouver

Reznik RR, Gridchin VO, Kotlyar KP, Kryzhanovskaya NV, Morozov SV, Cirlin GE. Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties. Semiconductors. 2020 Sep 1;54(9):1075-1077. https://doi.org/10.1134/S1063782620090237

Author

Reznik, R. R. ; Gridchin, V. O. ; Kotlyar, K. P. ; Kryzhanovskaya, N. V. ; Morozov, S. V. ; Cirlin, G. E. / Synthesis of Morphologically Developed InGaN Nanostructures on Silicon : Influence of the Substrate Temperature on the Morphological and Optical Properties. In: Semiconductors. 2020 ; Vol. 54, No. 9. pp. 1075-1077.

BibTeX

@article{364e550102ff46f58fa7714b6222014b,
title = "Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties",
abstract = "Abstract: The study concerns the issue of how the morphological characteristics and optical properties of morphologically branched InGaN nanostructures grown on the Si(111) surface by molecular-beam epitaxy depend on the substrate temperature. It is shown that, as the substrate temperature is elevated, the height of InGaN nanocolumns formed at the initial stage of growth increases. In addition, an increase in the growth temperature of InGaN nanostructures yields an increase in the intensity of the photoluminescence spectra of such structures, and the dependences of the integrated photoluminescence intensity on the excitation power density are linear. These facts suggest that the structures offer promise for optical applications, specifically, for the creation of white light-emitting diodes on the basis of a unified material.",
keywords = "InGaN, molecular-beam epitaxy, nanostructures, optoelectronics, semiconductors, silicon",
author = "Reznik, {R. R.} and Gridchin, {V. O.} and Kotlyar, {K. P.} and Kryzhanovskaya, {N. V.} and Morozov, {S. V.} and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd.",
year = "2020",
month = sep,
day = "1",
doi = "10.1134/S1063782620090237",
language = "English",
volume = "54",
pages = "1075--1077",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "9",

}

RIS

TY - JOUR

T1 - Synthesis of Morphologically Developed InGaN Nanostructures on Silicon

T2 - Influence of the Substrate Temperature on the Morphological and Optical Properties

AU - Reznik, R. R.

AU - Gridchin, V. O.

AU - Kotlyar, K. P.

AU - Kryzhanovskaya, N. V.

AU - Morozov, S. V.

AU - Cirlin, G. E.

N1 - Publisher Copyright: © 2020, Pleiades Publishing, Ltd.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - Abstract: The study concerns the issue of how the morphological characteristics and optical properties of morphologically branched InGaN nanostructures grown on the Si(111) surface by molecular-beam epitaxy depend on the substrate temperature. It is shown that, as the substrate temperature is elevated, the height of InGaN nanocolumns formed at the initial stage of growth increases. In addition, an increase in the growth temperature of InGaN nanostructures yields an increase in the intensity of the photoluminescence spectra of such structures, and the dependences of the integrated photoluminescence intensity on the excitation power density are linear. These facts suggest that the structures offer promise for optical applications, specifically, for the creation of white light-emitting diodes on the basis of a unified material.

AB - Abstract: The study concerns the issue of how the morphological characteristics and optical properties of morphologically branched InGaN nanostructures grown on the Si(111) surface by molecular-beam epitaxy depend on the substrate temperature. It is shown that, as the substrate temperature is elevated, the height of InGaN nanocolumns formed at the initial stage of growth increases. In addition, an increase in the growth temperature of InGaN nanostructures yields an increase in the intensity of the photoluminescence spectra of such structures, and the dependences of the integrated photoluminescence intensity on the excitation power density are linear. These facts suggest that the structures offer promise for optical applications, specifically, for the creation of white light-emitting diodes on the basis of a unified material.

KW - InGaN

KW - molecular-beam epitaxy

KW - nanostructures

KW - optoelectronics

KW - semiconductors

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85090359834&partnerID=8YFLogxK

U2 - 10.1134/S1063782620090237

DO - 10.1134/S1063782620090237

M3 - Article

AN - SCOPUS:85090359834

VL - 54

SP - 1075

EP - 1077

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 98505099