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Study of the SiO 2 layer growth by the ML-ALE method. / Drozd, V. E.; Tolstoy, V. P.

In: Applied Surface Science, Vol. 112, 01.01.1997, p. 269-272.

Research output: Contribution to journal › Article › peer-review

Harvard

Drozd, VE & Tolstoy, VP 1997, 'Study of the SiO 2 layer growth by the ML-ALE method', Applied Surface Science, vol. 112, pp. 269-272. https://doi.org/10.1016/S0169-4332(96)01018-5

APA

Drozd, V. E., & Tolstoy, V. P. (1997). Study of the SiO 2 layer growth by the ML-ALE method. Applied Surface Science, 112, 269-272. https://doi.org/10.1016/S0169-4332(96)01018-5

Vancouver

Drozd VE, Tolstoy VP. Study of the SiO 2 layer growth by the ML-ALE method. Applied Surface Science. 1997 Jan 1;112:269-272. https://doi.org/10.1016/S0169-4332(96)01018-5

Author

Drozd, V. E. ; Tolstoy, V. P. / Study of the SiO 2 layer growth by the ML-ALE method. In: Applied Surface Science. 1997 ; Vol. 112. pp. 269-272.

BibTeX

@article{162afe193d4c4f8aa1a551791881e70a,
title = "Study of the SiO 2 layer growth by the ML-ALE method",
abstract = " The investigation of the molecular layering (ML)-ALE synthesis of the SiO 2 nanolayers on the Si substrate was performed by use of IR multiple transmission spectroscopy, ellipsometry and contact angle measurements. SiCl 4 and H 2 O were used as precursors. The correlation between structure of the native oxide on the Si surface, contact angle and the coverage of the surface by the SiO 4\2 tetrahedrons was established. The affect of the composition and the thickness of the SiO 2 layer, as well as its hydroxylation, on the kinetics of the SiO 2 layers growth was found. ",
author = "Drozd, {V. E.} and Tolstoy, {V. P.}",
year = "1997",
month = jan,
day = "1",
doi = "10.1016/S0169-4332(96)01018-5",
language = "English",
volume = "112",
pages = "269--272",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Study of the SiO 2 layer growth by the ML-ALE method

AU - Drozd, V. E.

AU - Tolstoy, V. P.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The investigation of the molecular layering (ML)-ALE synthesis of the SiO 2 nanolayers on the Si substrate was performed by use of IR multiple transmission spectroscopy, ellipsometry and contact angle measurements. SiCl 4 and H 2 O were used as precursors. The correlation between structure of the native oxide on the Si surface, contact angle and the coverage of the surface by the SiO 4\2 tetrahedrons was established. The affect of the composition and the thickness of the SiO 2 layer, as well as its hydroxylation, on the kinetics of the SiO 2 layers growth was found.

AB - The investigation of the molecular layering (ML)-ALE synthesis of the SiO 2 nanolayers on the Si substrate was performed by use of IR multiple transmission spectroscopy, ellipsometry and contact angle measurements. SiCl 4 and H 2 O were used as precursors. The correlation between structure of the native oxide on the Si surface, contact angle and the coverage of the surface by the SiO 4\2 tetrahedrons was established. The affect of the composition and the thickness of the SiO 2 layer, as well as its hydroxylation, on the kinetics of the SiO 2 layers growth was found.

UR - http://www.scopus.com/inward/record.url?scp=0031546865&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(96)01018-5

DO - 10.1016/S0169-4332(96)01018-5

M3 - Article

AN - SCOPUS:0031546865

VL - 112

SP - 269

EP - 272

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

ID: 42175556