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Structure and Electrical Conductivity of Thin AlN Films on Si. / Базлов, Николай Владимирович; Вывенко, Олег Федорович; Ниязова, Н.В.; Котина, Ирина Михайловна; Трушин, Максим Валерьевич; Бондаренко, Антон Сергеевич.

In: Crystallography Reports, Vol. 69, No. 1, 01.02.2024, p. 65-72.

Research output: Contribution to journal › Article › peer-review

Harvard

Базлов, НВ, Вывенко, ОФ, Ниязова, НВ, Котина, ИМ, Трушин, МВ & Бондаренко, АС 2024, 'Structure and Electrical Conductivity of Thin AlN Films on Si', Crystallography Reports, vol. 69, no. 1, pp. 65-72. https://doi.org/10.1134/s1063774523601260

APA

Базлов, Н. В., Вывенко, О. Ф., Ниязова, Н. В., Котина, И. М., Трушин, М. В., & Бондаренко, А. С. (2024). Structure and Electrical Conductivity of Thin AlN Films on Si. Crystallography Reports, 69(1), 65-72. https://doi.org/10.1134/s1063774523601260

Vancouver

Базлов НВ, Вывенко ОФ, Ниязова НВ, Котина ИМ, Трушин МВ, Бондаренко АС. Structure and Electrical Conductivity of Thin AlN Films on Si. Crystallography Reports. 2024 Feb 1;69(1):65-72. https://doi.org/10.1134/s1063774523601260

Author

Базлов, Николай Владимирович ; Вывенко, Олег Федорович ; Ниязова, Н.В. ; Котина, Ирина Михайловна ; Трушин, Максим Валерьевич ; Бондаренко, Антон Сергеевич. / Structure and Electrical Conductivity of Thin AlN Films on Si. In: Crystallography Reports. 2024 ; Vol. 69, No. 1. pp. 65-72.

BibTeX

@article{bbd3b5dde3c34f88824393d2a5057600,
title = "Structure and Electrical Conductivity of Thin AlN Films on Si",
abstract = "Aluminum nitride films have been synthesized by reactive magnetron sputtering on n-Si(100) substrates. AlN layers with thicknesses from 2 to 150 nm were obtained to establish a correlation between the structure of the films and their electrical conductivity. Electron microscopy revealed that the amorphous structure of the films passes to nanocrystalline one while moving away from the substrate surface. Films with thicknesses below 20 nm had a high conductivity: up to 10 (Ω cm)–1; with an increase in thickness the conductivity dropped to 10–7 (Ω cm)–1. The high conductivity of thin AlN layers is believed to be due to the high density of the boundaries of grains built-in into amorphous matrix.",
keywords = "ALN, Si, Electron microscopy, Structure, conductivity",
author = "Базлов, {Николай Владимирович} and Вывенко, {Олег Федорович} and Н.В. Ниязова and Котина, {Ирина Михайловна} and Трушин, {Максим Валерьевич} and Бондаренко, {Антон Сергеевич}",
year = "2024",
month = feb,
day = "1",
doi = "10.1134/s1063774523601260",
language = "English",
volume = "69",
pages = "65--72",
journal = "Crystallography Reports",
issn = "1063-7745",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "1",

}

RIS

TY - JOUR

T1 - Structure and Electrical Conductivity of Thin AlN Films on Si

AU - Базлов, Николай Владимирович

AU - Вывенко, Олег Федорович

AU - Ниязова, Н.В.

AU - Котина, Ирина Михайловна

AU - Трушин, Максим Валерьевич

AU - Бондаренко, Антон Сергеевич

PY - 2024/2/1

Y1 - 2024/2/1

N2 - Aluminum nitride films have been synthesized by reactive magnetron sputtering on n-Si(100) substrates. AlN layers with thicknesses from 2 to 150 nm were obtained to establish a correlation between the structure of the films and their electrical conductivity. Electron microscopy revealed that the amorphous structure of the films passes to nanocrystalline one while moving away from the substrate surface. Films with thicknesses below 20 nm had a high conductivity: up to 10 (Ω cm)–1; with an increase in thickness the conductivity dropped to 10–7 (Ω cm)–1. The high conductivity of thin AlN layers is believed to be due to the high density of the boundaries of grains built-in into amorphous matrix.

AB - Aluminum nitride films have been synthesized by reactive magnetron sputtering on n-Si(100) substrates. AlN layers with thicknesses from 2 to 150 nm were obtained to establish a correlation between the structure of the films and their electrical conductivity. Electron microscopy revealed that the amorphous structure of the films passes to nanocrystalline one while moving away from the substrate surface. Films with thicknesses below 20 nm had a high conductivity: up to 10 (Ω cm)–1; with an increase in thickness the conductivity dropped to 10–7 (Ω cm)–1. The high conductivity of thin AlN layers is believed to be due to the high density of the boundaries of grains built-in into amorphous matrix.

KW - ALN

KW - Si

KW - Electron microscopy

KW - Structure

KW - conductivity

UR - https://www.mendeley.com/catalogue/b1b9d97b-89d3-390d-b9f6-8f1e68da2161/

U2 - 10.1134/s1063774523601260

DO - 10.1134/s1063774523601260

M3 - Article

VL - 69

SP - 65

EP - 72

JO - Crystallography Reports

JF - Crystallography Reports

SN - 1063-7745

IS - 1

ER -

ID: 121666956