Research output: Contribution to journal › Article › peer-review
We present the results of photoluminescence measurements of AlxGa1-xAs nanowires, together with the transmission electron microscopy structural analysis. AlxGa1-xAs nanowires were grown by molecular beam epitaxy under the nominal aluminum contents ? = 0.3-0.7. The obtained results demonstrate the presence of wurtzite structure in AlxGa1-xAs nanowires.
| Original language | English |
|---|---|
| Pages (from-to) | 2146-2148 |
| Number of pages | 3 |
| Journal | Semiconductors |
| Volume | 52 |
| Issue number | 16 |
| DOIs | |
| State | Published - 17 Dec 2018 |
ID: 36518619