TY - GEN

T1 - Spin dynamics in two-dimensional electron and hole systems revealed by resonant spin amplification

AU - Korn, T.

AU - Griesbeck, M.

AU - Kugler, M.

AU - Furthmeier, S.

AU - Gradl, C.

AU - Hirmer, M.

AU - Schuh, D.

AU - Wegscheider, W.

AU - Korzekwa, K.

AU - MacHnikowski, P.

AU - Kuhn, T.

AU - Glazov, M. M.

AU - Sherman, E. Ya

AU - Schüller, C.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Understanding and controlling the spin dynamics in semiconductor heterostructures is a key requirement for the design of future spintronics devices. In GaAs-based heterostructures, electrons and holes have very different spin dynamics. Some control over the spin-orbit fields, which drive the electron spin dynamics, is possible by choosing the crystallographic growth axis. Here, (110)-grown structures are interesting, as the Dresselhaus spin-orbit fields are oriented along the growth axis and therefore, the typically dominant Dyakonov-Perel mechanism is suppressed for spins oriented along this axis, leading to long spin depasing times. By contrast, hole spin dephasing is typically very rapid due to the strong spin-orbit interaction of the p-like valence band states. For localized holes, however, most spin dephasing mechanisms are suppressed, and long spin dephasing times may be observed. Here, we present a study of electron and hole spin dynamics in GaAs-AlGaAs-based quantum wells. We apply the resonant spin amplification (RSA) technique, which allows us to extract all relevant spin dynamics parameters, such as g factors and dephasing times with high accuracy. A comparison of the measured RSA traces with the developed theory reveals the anisotropy of the spin dephasing in the (110)-grown two-dimensional electron systems, as well as the complex interplay between electron and hole spin and carrier dynamics in the two-dimensional hole systems.

AB - Understanding and controlling the spin dynamics in semiconductor heterostructures is a key requirement for the design of future spintronics devices. In GaAs-based heterostructures, electrons and holes have very different spin dynamics. Some control over the spin-orbit fields, which drive the electron spin dynamics, is possible by choosing the crystallographic growth axis. Here, (110)-grown structures are interesting, as the Dresselhaus spin-orbit fields are oriented along the growth axis and therefore, the typically dominant Dyakonov-Perel mechanism is suppressed for spins oriented along this axis, leading to long spin depasing times. By contrast, hole spin dephasing is typically very rapid due to the strong spin-orbit interaction of the p-like valence band states. For localized holes, however, most spin dephasing mechanisms are suppressed, and long spin dephasing times may be observed. Here, we present a study of electron and hole spin dynamics in GaAs-AlGaAs-based quantum wells. We apply the resonant spin amplification (RSA) technique, which allows us to extract all relevant spin dynamics parameters, such as g factors and dephasing times with high accuracy. A comparison of the measured RSA traces with the developed theory reveals the anisotropy of the spin dephasing in the (110)-grown two-dimensional electron systems, as well as the complex interplay between electron and hole spin and carrier dynamics in the two-dimensional hole systems.

KW - Spin dynamics

KW - Time-resolved spectroscopy

KW - Two-dimensional electron system

KW - Two-dimensional hole system

UR - http://www.scopus.com/inward/record.url?scp=84872110200&partnerID=8YFLogxK

U2 - 10.1117/12.930840

DO - 10.1117/12.930840

M3 - Conference contribution

AN - SCOPUS:84872110200

SN - 9780819491787

VL - 8461

BT - Spintronics V

T2 - Spintronics V

Y2 - 12 August 2012 through 16 August 2012

ER -