Understanding and controlling the spin dynamics in semiconductor heterostructures is a key requirement for the design of future spintronics devices. In GaAs-based heterostructures, electrons and holes have very different spin dynamics. Some control over the spin-orbit fields, which drive the electron spin dynamics, is possible by choosing the crystallographic growth axis. Here, (110)-grown structures are interesting, as the Dresselhaus spin-orbit fields are oriented along the growth axis and therefore, the typically dominant Dyakonov-Perel mechanism is suppressed for spins oriented along this axis, leading to long spin depasing times. By contrast, hole spin dephasing is typically very rapid due to the strong spin-orbit interaction of the p-like valence band states. For localized holes, however, most spin dephasing mechanisms are suppressed, and long spin dephasing times may be observed. Here, we present a study of electron and hole spin dynamics in GaAs-AlGaAs-based quantum wells. We apply the resonant spin amplification (RSA) technique, which allows us to extract all relevant spin dynamics parameters, such as g factors and dephasing times with high accuracy. A comparison of the measured RSA traces with the developed theory reveals the anisotropy of the spin dephasing in the (110)-grown two-dimensional electron systems, as well as the complex interplay between electron and hole spin and carrier dynamics in the two-dimensional hole systems.