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Spectrally selective diffractive optical elements based on 2D-exciton resonance in InGaAs/GaAs single quantum wells. / Kapitonov, Yu V.; Kozhaev, M. A.; Dolgikh, Yu. K.; Eliseev, S. A.; Efimov, Yu P.; Ulyanov, P. G.; Petrov, V. V.; Ovsyankin, V. V.

In: Physica Status Solidi (B): Basic Research, Vol. 250, No. 10, 2013.

Research output: Contribution to journal › Article

Harvard

Kapitonov, YV, Kozhaev, MA, Dolgikh, YK, Eliseev, SA, Efimov, YP, Ulyanov, PG, Petrov, VV & Ovsyankin, VV 2013, 'Spectrally selective diffractive optical elements based on 2D-exciton resonance in InGaAs/GaAs single quantum wells', Physica Status Solidi (B): Basic Research, vol. 250, no. 10. https://doi.org/10.1002/pssb.201349112

APA

Kapitonov, Y. V., Kozhaev, M. A., Dolgikh, Y. K., Eliseev, S. A., Efimov, Y. P., Ulyanov, P. G., Petrov, V. V., & Ovsyankin, V. V. (2013). Spectrally selective diffractive optical elements based on 2D-exciton resonance in InGaAs/GaAs single quantum wells. Physica Status Solidi (B): Basic Research, 250(10). https://doi.org/10.1002/pssb.201349112

Vancouver

Kapitonov YV, Kozhaev MA, Dolgikh YK, Eliseev SA, Efimov YP, Ulyanov PG et al. Spectrally selective diffractive optical elements based on 2D-exciton resonance in InGaAs/GaAs single quantum wells. Physica Status Solidi (B): Basic Research. 2013;250(10). https://doi.org/10.1002/pssb.201349112

Author

Kapitonov, Yu V. ; Kozhaev, M. A. ; Dolgikh, Yu. K. ; Eliseev, S. A. ; Efimov, Yu P. ; Ulyanov, P. G. ; Petrov, V. V. ; Ovsyankin, V. V. / Spectrally selective diffractive optical elements based on 2D-exciton resonance in InGaAs/GaAs single quantum wells. In: Physica Status Solidi (B): Basic Research. 2013 ; Vol. 250, No. 10.

BibTeX

@article{c44cc29a0ae94da4a27f6a1c73c90c4d,
title = "Spectrally selective diffractive optical elements based on 2D-exciton resonance in InGaAs/GaAs single quantum wells",
abstract = "We report on a method of creating spectrally selective diffractive optical elements based on resonantly reflecting mirrors made of semiconductor structures with 2D Wannier-Mott excitons. This method employs strong dependence of resonant reflection coefficient on the inhomogeneous broadening determined by exciton scattering on the quantum-well structural defects. Realization of the proposed method of addressable control of the excitonic resonance inhomogeneous width includes two stages. At the first stage the substrate surface is exposed to an ion beam with intensity relief corresponding to the desired diffractive optical element pattern. Then the structure with quantum wells is being grown on the exposed substrate by molecular beam epitaxy. In this article we present a spectroscopic study of structures with InGaAs/GaAs quantum wells grown on a GaAs substrate patterned with arrays of periodical parallel lines by a focused Ga+ ion beam. These structures combine properties of the diffraction grating with spectra",
keywords = "Diffraction grating, Excitons, III-V semiconductors, Nanofabrication, Quantum wells",
author = "Kapitonov, {Yu V.} and Kozhaev, {M. A.} and Dolgikh, {Yu. K.} and Eliseev, {S. A.} and Efimov, {Yu P.} and Ulyanov, {P. G.} and Petrov, {V. V.} and Ovsyankin, {V. V.}",
year = "2013",
doi = "10.1002/pssb.201349112",
language = "English",
volume = "250",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-Blackwell",
number = "10",

}

RIS

TY - JOUR

T1 - Spectrally selective diffractive optical elements based on 2D-exciton resonance in InGaAs/GaAs single quantum wells

AU - Kapitonov, Yu V.

AU - Kozhaev, M. A.

AU - Dolgikh, Yu. K.

AU - Eliseev, S. A.

AU - Efimov, Yu P.

AU - Ulyanov, P. G.

AU - Petrov, V. V.

AU - Ovsyankin, V. V.

PY - 2013

Y1 - 2013

N2 - We report on a method of creating spectrally selective diffractive optical elements based on resonantly reflecting mirrors made of semiconductor structures with 2D Wannier-Mott excitons. This method employs strong dependence of resonant reflection coefficient on the inhomogeneous broadening determined by exciton scattering on the quantum-well structural defects. Realization of the proposed method of addressable control of the excitonic resonance inhomogeneous width includes two stages. At the first stage the substrate surface is exposed to an ion beam with intensity relief corresponding to the desired diffractive optical element pattern. Then the structure with quantum wells is being grown on the exposed substrate by molecular beam epitaxy. In this article we present a spectroscopic study of structures with InGaAs/GaAs quantum wells grown on a GaAs substrate patterned with arrays of periodical parallel lines by a focused Ga+ ion beam. These structures combine properties of the diffraction grating with spectra

AB - We report on a method of creating spectrally selective diffractive optical elements based on resonantly reflecting mirrors made of semiconductor structures with 2D Wannier-Mott excitons. This method employs strong dependence of resonant reflection coefficient on the inhomogeneous broadening determined by exciton scattering on the quantum-well structural defects. Realization of the proposed method of addressable control of the excitonic resonance inhomogeneous width includes two stages. At the first stage the substrate surface is exposed to an ion beam with intensity relief corresponding to the desired diffractive optical element pattern. Then the structure with quantum wells is being grown on the exposed substrate by molecular beam epitaxy. In this article we present a spectroscopic study of structures with InGaAs/GaAs quantum wells grown on a GaAs substrate patterned with arrays of periodical parallel lines by a focused Ga+ ion beam. These structures combine properties of the diffraction grating with spectra

KW - Diffraction grating

KW - Excitons

KW - III-V semiconductors

KW - Nanofabrication

KW - Quantum wells

U2 - 10.1002/pssb.201349112

DO - 10.1002/pssb.201349112

M3 - Article

VL - 250

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 10

ER -

ID: 7381486