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Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing. / Gorokh, Gennady ; Bogomazova, Natalia ; Taleb, Abdelhafed ; Zhylinski, Valery ; Galkovsky, Timur ; Zakhlebayeva, Anna ; Lozovenko, Andrei ; Iji, Michael ; Fedosenko, Vladimir ; Tolstoy, Valeri .

In: Sensors (Switzerland), Vol. 21, No. 12, 4169, 02.06.2021.

Research output: Contribution to journalArticlepeer-review

Harvard

Gorokh, G, Bogomazova, N, Taleb, A, Zhylinski, V, Galkovsky, T, Zakhlebayeva, A, Lozovenko, A, Iji, M, Fedosenko, V & Tolstoy, V 2021, 'Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing', Sensors (Switzerland), vol. 21, no. 12, 4169. https://doi.org/10.3390/s21124169

APA

Gorokh, G., Bogomazova, N., Taleb, A., Zhylinski, V., Galkovsky, T., Zakhlebayeva, A., Lozovenko, A., Iji, M., Fedosenko, V., & Tolstoy, V. (2021). Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing. Sensors (Switzerland), 21(12), [4169]. https://doi.org/10.3390/s21124169

Vancouver

Gorokh G, Bogomazova N, Taleb A, Zhylinski V, Galkovsky T, Zakhlebayeva A et al. Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing. Sensors (Switzerland). 2021 Jun 2;21(12). 4169. https://doi.org/10.3390/s21124169

Author

Gorokh, Gennady ; Bogomazova, Natalia ; Taleb, Abdelhafed ; Zhylinski, Valery ; Galkovsky, Timur ; Zakhlebayeva, Anna ; Lozovenko, Andrei ; Iji, Michael ; Fedosenko, Vladimir ; Tolstoy, Valeri . / Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing. In: Sensors (Switzerland). 2021 ; Vol. 21, No. 12.

BibTeX

@article{318e6c9b60444213bf3ba2825a7fcd05,
title = "Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing",
abstract = "The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption. ",
keywords = ": ionic layer deposition, tin-tungsten oxides;, nanoporous anodic alumina matrixes, gas sensor, Gas sensor, Ionic layer deposition, Nanoporous anodic alumina matrixes, Tin-tungsten oxides, ionic layer deposition, nanoporous anodic alumina matrixes, SIZE, tin-tungsten oxides, gas sensor, ALUMINA FILMS, MICROSTRUCTURE",
author = "Gennady Gorokh and Natalia Bogomazova and Abdelhafed Taleb and Valery Zhylinski and Timur Galkovsky and Anna Zakhlebayeva and Andrei Lozovenko and Michael Iji and Vladimir Fedosenko and Valeri Tolstoy",
note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2021",
month = jun,
day = "2",
doi = "https://doi.org/10.3390/s21124169",
language = "English",
volume = "21",
journal = "Sensors",
issn = "1424-3210",
publisher = "MDPI AG",
number = "12",

}

RIS

TY - JOUR

T1 - Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing

AU - Gorokh, Gennady

AU - Bogomazova, Natalia

AU - Taleb, Abdelhafed

AU - Zhylinski, Valery

AU - Galkovsky, Timur

AU - Zakhlebayeva, Anna

AU - Lozovenko, Andrei

AU - Iji, Michael

AU - Fedosenko, Vladimir

AU - Tolstoy, Valeri

N1 - Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/6/2

Y1 - 2021/6/2

N2 - The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption.

AB - The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption.

KW - : ionic layer deposition

KW - tin-tungsten oxides;

KW - nanoporous anodic alumina matrixes

KW - gas sensor

KW - Gas sensor

KW - Ionic layer deposition

KW - Nanoporous anodic alumina matrixes

KW - Tin-tungsten oxides

KW - ionic layer deposition

KW - nanoporous anodic alumina matrixes

KW - SIZE

KW - tin-tungsten oxides

KW - gas sensor

KW - ALUMINA FILMS

KW - MICROSTRUCTURE

UR - http://www.scopus.com/inward/record.url?scp=85107903606&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/40502b59-bab9-3659-a824-770b4730f305/

U2 - https://doi.org/10.3390/s21124169

DO - https://doi.org/10.3390/s21124169

M3 - Article

VL - 21

JO - Sensors

JF - Sensors

SN - 1424-3210

IS - 12

M1 - 4169

ER -

ID: 88111523