Research output: Contribution to journal › Article › peer-review
Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing. / Gorokh, Gennady ; Bogomazova, Natalia ; Taleb, Abdelhafed ; Zhylinski, Valery ; Galkovsky, Timur ; Zakhlebayeva, Anna ; Lozovenko, Andrei ; Iji, Michael ; Fedosenko, Vladimir ; Tolstoy, Valeri .
In: Sensors (Switzerland), Vol. 21, No. 12, 4169, 02.06.2021.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing
AU - Gorokh, Gennady
AU - Bogomazova, Natalia
AU - Taleb, Abdelhafed
AU - Zhylinski, Valery
AU - Galkovsky, Timur
AU - Zakhlebayeva, Anna
AU - Lozovenko, Andrei
AU - Iji, Michael
AU - Fedosenko, Vladimir
AU - Tolstoy, Valeri
N1 - Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2021/6/2
Y1 - 2021/6/2
N2 - The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption.
AB - The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption.
KW - : ionic layer deposition
KW - tin-tungsten oxides;
KW - nanoporous anodic alumina matrixes
KW - gas sensor
KW - Gas sensor
KW - Ionic layer deposition
KW - Nanoporous anodic alumina matrixes
KW - Tin-tungsten oxides
KW - ionic layer deposition
KW - nanoporous anodic alumina matrixes
KW - SIZE
KW - tin-tungsten oxides
KW - gas sensor
KW - ALUMINA FILMS
KW - MICROSTRUCTURE
UR - http://www.scopus.com/inward/record.url?scp=85107903606&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/40502b59-bab9-3659-a824-770b4730f305/
U2 - https://doi.org/10.3390/s21124169
DO - https://doi.org/10.3390/s21124169
M3 - Article
VL - 21
JO - Sensors
JF - Sensors
SN - 1424-3210
IS - 12
M1 - 4169
ER -
ID: 88111523