Standard

Sensors based on tin dioxide thin films for the detection of pre-explosive hydrogen concentrations. / Maksimova, N.K.; Sevastyanov, E.Y.; Chernikov, E.V.; Korusenko, P.M.; Nesov, Sergey N. ; Kim, S.V.; Biryukov, A.A.; Sergeychenko, N.V.; Davletkildeev, N.A.; Sokolov , D.V.

In: Sensors and Actuators, B: Chemical, Vol. 341, 130020, 15.08.2021.

Research output: Contribution to journalArticlepeer-review

Harvard

Maksimova, NK, Sevastyanov, EY, Chernikov, EV, Korusenko, PM, Nesov, SN, Kim, SV, Biryukov, AA, Sergeychenko, NV, Davletkildeev, NA & Sokolov , DV 2021, 'Sensors based on tin dioxide thin films for the detection of pre-explosive hydrogen concentrations', Sensors and Actuators, B: Chemical, vol. 341, 130020. https://doi.org/10.1016/j.snb.2021.130020

APA

Maksimova, N. K., Sevastyanov, E. Y., Chernikov, E. V., Korusenko, P. M., Nesov, S. N., Kim, S. V., Biryukov, A. A., Sergeychenko, N. V., Davletkildeev, N. A., & Sokolov , D. V. (2021). Sensors based on tin dioxide thin films for the detection of pre-explosive hydrogen concentrations. Sensors and Actuators, B: Chemical, 341, [130020]. https://doi.org/10.1016/j.snb.2021.130020

Vancouver

Maksimova NK, Sevastyanov EY, Chernikov EV, Korusenko PM, Nesov SN, Kim SV et al. Sensors based on tin dioxide thin films for the detection of pre-explosive hydrogen concentrations. Sensors and Actuators, B: Chemical. 2021 Aug 15;341. 130020. https://doi.org/10.1016/j.snb.2021.130020

Author

Maksimova, N.K. ; Sevastyanov, E.Y. ; Chernikov, E.V. ; Korusenko, P.M. ; Nesov, Sergey N. ; Kim, S.V. ; Biryukov, A.A. ; Sergeychenko, N.V. ; Davletkildeev, N.A. ; Sokolov , D.V. / Sensors based on tin dioxide thin films for the detection of pre-explosive hydrogen concentrations. In: Sensors and Actuators, B: Chemical. 2021 ; Vol. 341.

BibTeX

@article{fa49d0817b84447685fff0d4ad00347a,
title = "Sensors based on tin dioxide thin films for the detection of pre-explosive hydrogen concentrations",
abstract = "In this work, novel semiconductor sensors were developed for detecting high pre-explosive concentrations of H2 (0.1–2.5 vol%) with high selectivity and stability. The sensors were based on thin (∼100 nm) nanocrystalline SnO2 films produced by magnetron sputtering of dispersed Pt and Pd layers deposited on the surface and addition of 13–14 at% Pt in the bulk. Studies on their nanostructure, composition, electrical properties, and gas-sensitive characteristics were carried out. X-ray photoelectron and Raman spectroscopies revealed that in the process of stabilizing annealing in Pt/Pd/SnO2:Sb,Pt film platinum introduced into the bulk segregates on the surface of the SnO2 microcrystals in the form of Pt° metal clusters and dispersed Pt2+ ions. The dispersed Pt2+ ions form bonds with lattice oxygen and contribute to the overlap of conduction channels. In the sensor subjected to annealing at =723 K and =873K, the optimal situation is realized when under the action of low (n < 0.1 vol%) H2 concentrations, the condition 2d0 = dM is satisfied and G1/G0 = 9–12. In the range of 0.1–2.5 vol% H2, narrowing of the space-charge region favors the formation of a conducting layer, and at 2d0 ≤ dM there is a sharp increase in the values of the responses to G1/G0 = 220–250 at 2.5 vol%.",
keywords = "thin films, tin dioxide (SnO2), hydrogen sensors, platinum, stability of sensor parameters, Raman spectroscopy, X-ray photoelectron spectroscopy, thin films, tin dioxide (SnO), hydrogen sensors, platinum, stability of sensor parameters, Raman spectroscopy, X-ray photoelectron spectroscopy, Thin films, Platinum, Stability of sensor parameters, Hydrogen sensors, Tin dioxide (SnO ), STABILITY, ACETONE, SENSITIVITY, COMPOSITES, CO, NANOPARTICLES, Tin dioxide (SnO2), NANOCRYSTALLINE SNO2, GAS, IMPROVEMENT, SURFACE",
author = "N.K. Maksimova and E.Y. Sevastyanov and E.V. Chernikov and P.M. Korusenko and Nesov, {Sergey N.} and S.V. Kim and A.A. Biryukov and N.V. Sergeychenko and N.A. Davletkildeev and D.V. Sokolov",
note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",
year = "2021",
month = aug,
day = "15",
doi = "10.1016/j.snb.2021.130020",
language = "English",
volume = "341",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Sensors based on tin dioxide thin films for the detection of pre-explosive hydrogen concentrations

AU - Maksimova, N.K.

AU - Sevastyanov, E.Y.

AU - Chernikov, E.V.

AU - Korusenko, P.M.

AU - Nesov, Sergey N.

AU - Kim, S.V.

AU - Biryukov, A.A.

AU - Sergeychenko, N.V.

AU - Davletkildeev, N.A.

AU - Sokolov , D.V.

N1 - Publisher Copyright: © 2021 Elsevier B.V.

PY - 2021/8/15

Y1 - 2021/8/15

N2 - In this work, novel semiconductor sensors were developed for detecting high pre-explosive concentrations of H2 (0.1–2.5 vol%) with high selectivity and stability. The sensors were based on thin (∼100 nm) nanocrystalline SnO2 films produced by magnetron sputtering of dispersed Pt and Pd layers deposited on the surface and addition of 13–14 at% Pt in the bulk. Studies on their nanostructure, composition, electrical properties, and gas-sensitive characteristics were carried out. X-ray photoelectron and Raman spectroscopies revealed that in the process of stabilizing annealing in Pt/Pd/SnO2:Sb,Pt film platinum introduced into the bulk segregates on the surface of the SnO2 microcrystals in the form of Pt° metal clusters and dispersed Pt2+ ions. The dispersed Pt2+ ions form bonds with lattice oxygen and contribute to the overlap of conduction channels. In the sensor subjected to annealing at =723 K and =873K, the optimal situation is realized when under the action of low (n < 0.1 vol%) H2 concentrations, the condition 2d0 = dM is satisfied and G1/G0 = 9–12. In the range of 0.1–2.5 vol% H2, narrowing of the space-charge region favors the formation of a conducting layer, and at 2d0 ≤ dM there is a sharp increase in the values of the responses to G1/G0 = 220–250 at 2.5 vol%.

AB - In this work, novel semiconductor sensors were developed for detecting high pre-explosive concentrations of H2 (0.1–2.5 vol%) with high selectivity and stability. The sensors were based on thin (∼100 nm) nanocrystalline SnO2 films produced by magnetron sputtering of dispersed Pt and Pd layers deposited on the surface and addition of 13–14 at% Pt in the bulk. Studies on their nanostructure, composition, electrical properties, and gas-sensitive characteristics were carried out. X-ray photoelectron and Raman spectroscopies revealed that in the process of stabilizing annealing in Pt/Pd/SnO2:Sb,Pt film platinum introduced into the bulk segregates on the surface of the SnO2 microcrystals in the form of Pt° metal clusters and dispersed Pt2+ ions. The dispersed Pt2+ ions form bonds with lattice oxygen and contribute to the overlap of conduction channels. In the sensor subjected to annealing at =723 K and =873K, the optimal situation is realized when under the action of low (n < 0.1 vol%) H2 concentrations, the condition 2d0 = dM is satisfied and G1/G0 = 9–12. In the range of 0.1–2.5 vol% H2, narrowing of the space-charge region favors the formation of a conducting layer, and at 2d0 ≤ dM there is a sharp increase in the values of the responses to G1/G0 = 220–250 at 2.5 vol%.

KW - thin films

KW - tin dioxide (SnO2)

KW - hydrogen sensors

KW - platinum

KW - stability of sensor parameters

KW - Raman spectroscopy

KW - X-ray photoelectron spectroscopy

KW - thin films

KW - tin dioxide (SnO)

KW - hydrogen sensors

KW - platinum

KW - stability of sensor parameters

KW - Raman spectroscopy

KW - X-ray photoelectron spectroscopy

KW - Thin films

KW - Platinum

KW - Stability of sensor parameters

KW - Hydrogen sensors

KW - Tin dioxide (SnO )

KW - STABILITY

KW - ACETONE

KW - SENSITIVITY

KW - COMPOSITES

KW - CO

KW - NANOPARTICLES

KW - Tin dioxide (SnO2)

KW - NANOCRYSTALLINE SNO2

KW - GAS

KW - IMPROVEMENT

KW - SURFACE

UR - http://www.scopus.com/inward/record.url?scp=85105894404&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/e18e40ca-6c4d-3f1f-a7b3-41a8659f313c/

U2 - 10.1016/j.snb.2021.130020

DO - 10.1016/j.snb.2021.130020

M3 - Article

VL - 341

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

M1 - 130020

ER -

ID: 76224756