Standard

Regular dislocation networks in silicon as a tool for novel device application. / Kittler, M.; Reiche, M.; Seifert, W.; Arguirov, T.; Vyvenko, O. F.; Mchedlidze, T.; Wilhelm, T.

In: ECS Transactions, Vol. 3, No. 4, 2006, p. 429-450.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Kittler, M, Reiche, M, Seifert, W, Arguirov, T, Vyvenko, OF, Mchedlidze, T & Wilhelm, T 2006, 'Regular dislocation networks in silicon as a tool for novel device application', ECS Transactions, vol. 3, no. 4, pp. 429-450. https://doi.org/10.1149/1.2355777

APA

Kittler, M., Reiche, M., Seifert, W., Arguirov, T., Vyvenko, O. F., Mchedlidze, T., & Wilhelm, T. (2006). Regular dislocation networks in silicon as a tool for novel device application. ECS Transactions, 3(4), 429-450. https://doi.org/10.1149/1.2355777

Vancouver

Kittler M, Reiche M, Seifert W, Arguirov T, Vyvenko OF, Mchedlidze T et al. Regular dislocation networks in silicon as a tool for novel device application. ECS Transactions. 2006;3(4):429-450. https://doi.org/10.1149/1.2355777

Author

Kittler, M. ; Reiche, M. ; Seifert, W. ; Arguirov, T. ; Vyvenko, O. F. ; Mchedlidze, T. ; Wilhelm, T. / Regular dislocation networks in silicon as a tool for novel device application. In: ECS Transactions. 2006 ; Vol. 3, No. 4. pp. 429-450.

BibTeX

@article{e52d0603f73841bcb4dfead7cef03c57,
title = "Regular dislocation networks in silicon as a tool for novel device application",
abstract = "The paper deals with possibilities of utilizing dislocation structures as active components of devices. The suggested means for controlled formation of dislocations is direct wafer bonding, giving rise to well defined dislocation networks with adjustable properties. It is shown that the networks allow building light emitting diodes based on the D line luminescence of the dislocations. A light emitter at about 1.5 μm wavelength is demonstrated, with an efficiency potential estimated at 1%. Immobilization of biomolecules on Si surfaces by Coulomb interaction with the dislocations in the network is another application discussed. Finally, the potential use of dislocation networks as insulating layers permeable to impurities to be gettered and as three-dimensional buried conductive channels in the Si wafer is addressed. copyright The Electrochemical Society.",
author = "M. Kittler and M. Reiche and W. Seifert and T. Arguirov and Vyvenko, {O. F.} and T. Mchedlidze and T. Wilhelm",
year = "2006",
doi = "10.1149/1.2355777",
language = "English",
volume = "3",
pages = "429--450",
journal = "ECS Transactions",
issn = "1938-6737",
publisher = "The Electrochemical Society",
number = "4",
note = "High Purity Silicon 9 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

RIS

TY - JOUR

T1 - Regular dislocation networks in silicon as a tool for novel device application

AU - Kittler, M.

AU - Reiche, M.

AU - Seifert, W.

AU - Arguirov, T.

AU - Vyvenko, O. F.

AU - Mchedlidze, T.

AU - Wilhelm, T.

PY - 2006

Y1 - 2006

N2 - The paper deals with possibilities of utilizing dislocation structures as active components of devices. The suggested means for controlled formation of dislocations is direct wafer bonding, giving rise to well defined dislocation networks with adjustable properties. It is shown that the networks allow building light emitting diodes based on the D line luminescence of the dislocations. A light emitter at about 1.5 μm wavelength is demonstrated, with an efficiency potential estimated at 1%. Immobilization of biomolecules on Si surfaces by Coulomb interaction with the dislocations in the network is another application discussed. Finally, the potential use of dislocation networks as insulating layers permeable to impurities to be gettered and as three-dimensional buried conductive channels in the Si wafer is addressed. copyright The Electrochemical Society.

AB - The paper deals with possibilities of utilizing dislocation structures as active components of devices. The suggested means for controlled formation of dislocations is direct wafer bonding, giving rise to well defined dislocation networks with adjustable properties. It is shown that the networks allow building light emitting diodes based on the D line luminescence of the dislocations. A light emitter at about 1.5 μm wavelength is demonstrated, with an efficiency potential estimated at 1%. Immobilization of biomolecules on Si surfaces by Coulomb interaction with the dislocations in the network is another application discussed. Finally, the potential use of dislocation networks as insulating layers permeable to impurities to be gettered and as three-dimensional buried conductive channels in the Si wafer is addressed. copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33846999029&partnerID=8YFLogxK

U2 - 10.1149/1.2355777

DO - 10.1149/1.2355777

M3 - Conference article

AN - SCOPUS:33846999029

VL - 3

SP - 429

EP - 450

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-6737

IS - 4

T2 - High Purity Silicon 9 - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

ID: 87674138