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Recombination-Related Properties of a-Screw Dislocations in GaN: A Combined CL, EBIC, TEM Study. / Medvedev, O. S.; Vyvenko, O. F.; Bondarenko, A. S.; Mikhailovskii, V. Yu.; Ubyivovk, E. V.; Peretzki, P.; Seibt, M.

In: AIP Conference Proceedings, Vol. 1748, No. 1, 020011, 2016.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Medvedev, OS, Vyvenko, OF, Bondarenko, AS, Mikhailovskii, VY, Ubyivovk, EV, Peretzki, P & Seibt, M 2016, 'Recombination-Related Properties of a-Screw Dislocations in GaN: A Combined CL, EBIC, TEM Study', AIP Conference Proceedings, vol. 1748, no. 1, 020011. https://doi.org/10.1063/1.4954345

APA

Medvedev, O. S., Vyvenko, O. F., Bondarenko, A. S., Mikhailovskii, V. Y., Ubyivovk, E. V., Peretzki, P., & Seibt, M. (2016). Recombination-Related Properties of a-Screw Dislocations in GaN: A Combined CL, EBIC, TEM Study. AIP Conference Proceedings, 1748(1), [ 020011]. https://doi.org/10.1063/1.4954345

Vancouver

Medvedev OS, Vyvenko OF, Bondarenko AS, Mikhailovskii VY, Ubyivovk EV, Peretzki P et al. Recombination-Related Properties of a-Screw Dislocations in GaN: A Combined CL, EBIC, TEM Study. AIP Conference Proceedings. 2016;1748(1). 020011. https://doi.org/10.1063/1.4954345

Author

Medvedev, O. S. ; Vyvenko, O. F. ; Bondarenko, A. S. ; Mikhailovskii, V. Yu. ; Ubyivovk, E. V. ; Peretzki, P. ; Seibt, M. / Recombination-Related Properties of a-Screw Dislocations in GaN: A Combined CL, EBIC, TEM Study. In: AIP Conference Proceedings. 2016 ; Vol. 1748, No. 1.

BibTeX

@article{7f38685c1e0f4440b96c6994e937a3b5,
title = "Recombination-Related Properties of a-Screw Dislocations in GaN: A Combined CL, EBIC, TEM Study",
abstract = "Cathodoluminescence (CL), electron beam current (EBIC) and transmission electron microscopy (TEM) techniques have been applied to investigate recombination properties and structure of freshly introduced dislocations in low-ohmic GaN crystals. It was confirmed that the only a-screw dislocations exhibited an intense characteristic dislocation-related luminescence (DRL) which persisted up to room temperature and was red-shifted by about 0.3 eV with respect to the band gap energy not only in HVPE but also in MOCVD grown samples. EBIC contrast of the dislocations was found to be temperature independent indicating that the dislocation-related recombination level is situated below 200 meV with respect of conduction band minimum. With the increasing of the magnification of the dislocation TEM cross-sectional images they were found to disappear, probably, due to the recombination enhanced dislocation glide (REDG) under electron beam exposure which was immediately observed in CL investigations on a large scale. The sta",
author = "Medvedev, {O. S.} and Vyvenko, {O. F.} and Bondarenko, {A. S.} and Mikhailovskii, {V. Yu.} and Ubyivovk, {E. V.} and P. Peretzki and M. Seibt",
year = "2016",
doi = "10.1063/1.4954345",
language = "English",
volume = "1748",
journal = "AIP Conference Proceedings",
issn = "0094-243X",
publisher = "American Institute of Physics",
number = "1",

}

RIS

TY - JOUR

T1 - Recombination-Related Properties of a-Screw Dislocations in GaN: A Combined CL, EBIC, TEM Study

AU - Medvedev, O. S.

AU - Vyvenko, O. F.

AU - Bondarenko, A. S.

AU - Mikhailovskii, V. Yu.

AU - Ubyivovk, E. V.

AU - Peretzki, P.

AU - Seibt, M.

PY - 2016

Y1 - 2016

N2 - Cathodoluminescence (CL), electron beam current (EBIC) and transmission electron microscopy (TEM) techniques have been applied to investigate recombination properties and structure of freshly introduced dislocations in low-ohmic GaN crystals. It was confirmed that the only a-screw dislocations exhibited an intense characteristic dislocation-related luminescence (DRL) which persisted up to room temperature and was red-shifted by about 0.3 eV with respect to the band gap energy not only in HVPE but also in MOCVD grown samples. EBIC contrast of the dislocations was found to be temperature independent indicating that the dislocation-related recombination level is situated below 200 meV with respect of conduction band minimum. With the increasing of the magnification of the dislocation TEM cross-sectional images they were found to disappear, probably, due to the recombination enhanced dislocation glide (REDG) under electron beam exposure which was immediately observed in CL investigations on a large scale. The sta

AB - Cathodoluminescence (CL), electron beam current (EBIC) and transmission electron microscopy (TEM) techniques have been applied to investigate recombination properties and structure of freshly introduced dislocations in low-ohmic GaN crystals. It was confirmed that the only a-screw dislocations exhibited an intense characteristic dislocation-related luminescence (DRL) which persisted up to room temperature and was red-shifted by about 0.3 eV with respect to the band gap energy not only in HVPE but also in MOCVD grown samples. EBIC contrast of the dislocations was found to be temperature independent indicating that the dislocation-related recombination level is situated below 200 meV with respect of conduction band minimum. With the increasing of the magnification of the dislocation TEM cross-sectional images they were found to disappear, probably, due to the recombination enhanced dislocation glide (REDG) under electron beam exposure which was immediately observed in CL investigations on a large scale. The sta

U2 - 10.1063/1.4954345

DO - 10.1063/1.4954345

M3 - Conference article

VL - 1748

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

IS - 1

M1 - 020011

ER -

ID: 73844800