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Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis. / Usachov, D.; Adamchuk, V. K.; Haberer, D.; Grüneis, A.; Sachdev, H.; Preobrajenski, A. B.; Laubschat, C.; Vyalikh, D. V.
In:
Physical Review B - Condensed Matter and Materials Physics, Vol. 82, 2010, p. 075415.
Research output: Contribution to journal › Article
Harvard
Usachov, D, Adamchuk, VK, Haberer, D, Grüneis, A, Sachdev, H, Preobrajenski, AB, Laubschat, C
& Vyalikh, DV 2010, '
Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis',
Physical Review B - Condensed Matter and Materials Physics, vol. 82, pp. 075415.
APA
Usachov, D., Adamchuk, V. K., Haberer, D., Grüneis, A., Sachdev, H., Preobrajenski, A. B., Laubschat, C.
, & Vyalikh, D. V. (2010).
Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis.
Physical Review B - Condensed Matter and Materials Physics,
82, 075415.
Vancouver
Author
BibTeX
@article{2063bed08cee4da7b9cefa1ad3c778d3,
title = "Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis",
author = "D. Usachov and Adamchuk, {V. K.} and D. Haberer and A. Gr{\"u}neis and H. Sachdev and Preobrajenski, {A. B.} and C. Laubschat and Vyalikh, {D. V.}",
year = "2010",
language = "не определен",
volume = "82",
pages = "075415",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
}
RIS
TY - JOUR
T1 - Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis
AU - Usachov, D.
AU - Adamchuk, V. K.
AU - Haberer, D.
AU - Grüneis, A.
AU - Sachdev, H.
AU - Preobrajenski, A. B.
AU - Laubschat, C.
AU - Vyalikh, D. V.
PY - 2010
Y1 - 2010
M3 - статья
VL - 82
SP - 075415
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
ER -
