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Quasi-freestanding and single-atom thick layer of hexagonal boron nitride as a substrate for graphene synthesis
Research output
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Contribution to journal
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Article
Department of Solid State Electronics
Laboratory of Electron Spin and Nano Structures
Overview
Cite this
D. Usachov
V. K. Adamchuk
D. Haberer
A. Grüneis
H. Sachdev
A. B. Preobrajenski
C. Laubschat
D. V. Vyalikh
Original language
Undefined
Pages (from-to)
075415
Journal
Physical Review B - Condensed Matter and Materials Physics
Volume
82
State
Published -
2010
ID: 5063604