Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots

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Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots. / Smirnov, M. B.; Talalaev, V. G.; Novikov, B. V.; Sarangov, S. V.; Tsyrlin, G. É; Zakharov, N. D.

In: Physics of the Solid State, Vol. 49, No. 6, 06.2007, p. 1184-1190.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{ab7619abf0d3463aacfd546216c82c9b,

title = "Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots",

abstract = "A mathematical model is proposed for describing the temperature dependence of the photoluminescence spectrum of self-ordered arrays of quantum dots with due regard for the electron-phonon interaction and different transfer processes in the {"}quantum dot-wetting layer-barrier{"} system. This model, as applied to analysis of the experimental spectra of InAs quantum dots grown on GaAs vicinal substrates, makes it possible to separate the manifestations of different mechanisms of excitation transfer in the photoluminescence spectra and to relate the observed temperature dependences of the spectra to the structural features of the quantum-dot array.",

author = "Smirnov, {M. B.} and Talalaev, {V. G.} and Novikov, {B. V.} and Sarangov, {S. V.} and Tsyrlin, {G. {\'E}} and Zakharov, {N. D.}",

year = "2007",

month = jun,

doi = "10.1134/S1063783407060261",

language = "English",

volume = "49",

pages = "1184--1190",

journal = "Physics of the Solid State",

issn = "1063-7834",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "6",

}

RIS

TY - JOUR

T1 - Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots

AU - Smirnov, M. B.

AU - Talalaev, V. G.

AU - Novikov, B. V.

AU - Sarangov, S. V.

AU - Tsyrlin, G. É

AU - Zakharov, N. D.

PY - 2007/6

Y1 - 2007/6

N2 - A mathematical model is proposed for describing the temperature dependence of the photoluminescence spectrum of self-ordered arrays of quantum dots with due regard for the electron-phonon interaction and different transfer processes in the "quantum dot-wetting layer-barrier" system. This model, as applied to analysis of the experimental spectra of InAs quantum dots grown on GaAs vicinal substrates, makes it possible to separate the manifestations of different mechanisms of excitation transfer in the photoluminescence spectra and to relate the observed temperature dependences of the spectra to the structural features of the quantum-dot array.

AB - A mathematical model is proposed for describing the temperature dependence of the photoluminescence spectrum of self-ordered arrays of quantum dots with due regard for the electron-phonon interaction and different transfer processes in the "quantum dot-wetting layer-barrier" system. This model, as applied to analysis of the experimental spectra of InAs quantum dots grown on GaAs vicinal substrates, makes it possible to separate the manifestations of different mechanisms of excitation transfer in the photoluminescence spectra and to relate the observed temperature dependences of the spectra to the structural features of the quantum-dot array.

UR - http://www.scopus.com/inward/record.url?scp=36048986056&partnerID=8YFLogxK

U2 - 10.1134/S1063783407060261

DO - 10.1134/S1063783407060261

M3 - Article

AN - SCOPUS:36048986056

VL - 49

SP - 1184

EP - 1190

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 6

ER -

ID: 73027544