Standard

Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation. / Chekmazov, S. V.; Smirnov, A. A.; Ksenz, A. S.; Bozhko, S. I.; Ionov, A. M.; Protasova, S. G.; Kapustin, A. A.; Vilkov, O. Yu; Levchenko, E. A.

In: Materials Letters, Vol. 240, 01.04.2019, p. 69-72.

Research output: Contribution to journal › Article › peer-review

Harvard

Chekmazov, SV, Smirnov, AA, Ksenz, AS, Bozhko, SI, Ionov, AM, Protasova, SG, Kapustin, AA, Vilkov, OY & Levchenko, EA 2019, 'Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation', Materials Letters, vol. 240, pp. 69-72. https://doi.org/10.1016/j.matlet.2018.12.074

APA

Chekmazov, S. V., Smirnov, A. A., Ksenz, A. S., Bozhko, S. I., Ionov, A. M., Protasova, S. G., Kapustin, A. A., Vilkov, O. Y., & Levchenko, E. A. (2019). Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation. Materials Letters, 240, 69-72. https://doi.org/10.1016/j.matlet.2018.12.074

Vancouver

Chekmazov SV, Smirnov AA, Ksenz AS, Bozhko SI, Ionov AM, Protasova SG et al. Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation. Materials Letters. 2019 Apr 1;240:69-72. https://doi.org/10.1016/j.matlet.2018.12.074

Author

Chekmazov, S. V. ; Smirnov, A. A. ; Ksenz, A. S. ; Bozhko, S. I. ; Ionov, A. M. ; Protasova, S. G. ; Kapustin, A. A. ; Vilkov, O. Yu ; Levchenko, E. A. / Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation. In: Materials Letters. 2019 ; Vol. 240. pp. 69-72.

BibTeX

@article{accbf9deccb5400199317467eaef240e,
title = "Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation",
abstract = " Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar + sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs). ",
keywords = "Peierls transition, Sb(1 1 1) surface, Surface diffusion, Sb(111) surface, LEED",
author = "Chekmazov, {S. V.} and Smirnov, {A. A.} and Ksenz, {A. S.} and Bozhko, {S. I.} and Ionov, {A. M.} and Protasova, {S. G.} and Kapustin, {A. A.} and Vilkov, {O. Yu} and Levchenko, {E. A.}",
year = "2019",
month = apr,
day = "1",
doi = "10.1016/j.matlet.2018.12.074",
language = "English",
volume = "240",
pages = "69--72",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Nontrivial evolution of the Sb(1 1 1) electronic and atomic structure after ion irradiation

AU - Chekmazov, S. V.

AU - Smirnov, A. A.

AU - Ksenz, A. S.

AU - Bozhko, S. I.

AU - Ionov, A. M.

AU - Protasova, S. G.

AU - Kapustin, A. A.

AU - Vilkov, O. Yu

AU - Levchenko, E. A.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar + sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs).

AB - Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar + sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs).

KW - Peierls transition

KW - Sb(1 1 1) surface

KW - Surface diffusion

KW - Sb(111) surface

KW - LEED

UR - http://www.scopus.com/inward/record.url?scp=85059573085&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/nontrivial-evolution-sb111-electronic-atomic-structure-after-ion-irradiation-1

U2 - 10.1016/j.matlet.2018.12.074

DO - 10.1016/j.matlet.2018.12.074

M3 - Article

AN - SCOPUS:85059573085

VL - 240

SP - 69

EP - 72

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -

ID: 41101533