Defects in crystal structure of layered material can modify the surface states. Ion bombardment is a simple way to introduce defects into a crystal lattice in the surface region. Comprehensive scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and photoemission studies are presented to uncover the impact of ion etching and thermal annealing on the atomic and electronic structure of Sb(1 1 1) surface. We reveal the unusual behavior of the Sb(1 1 1) surface after Ar ⁺ sputtering at 300 K (RT). The 3 nm-sized terraces formed even after a prolonged ion bombardment are established by LEED. Also, an increase in density of states (DOS) at the Fermi edge is detected for the etched Sb(1 1 1) surface due to the ruptured covalent bonds (CBs).