NEXAFS study of electronic and atomic structure of active layer in Al/Indium Tin Oxide/TiO2 stack during resistive switching

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	274-284
Journal	Science and Technology of Advanced Materials
Volume	17
Issue number	1
DOIs	https://doi.org/10.1080/14686996.2016.1182851
State	Published - 2016

ID: 7567128