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Nanoisland Shape Variation during Selective Epitaxy. / Dubrovskii, V. G.

In: Technical Physics Letters, Vol. 47, No. 10, 10.2021, p. 701-704.

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Dubrovskii, V. G. / Nanoisland Shape Variation during Selective Epitaxy. In: Technical Physics Letters. 2021 ; Vol. 47, No. 10. pp. 701-704.

BibTeX

@article{c1862bc874e247cca30bf6ca4ae4802b,
title = "Nanoisland Shape Variation during Selective Epitaxy",
abstract = "Abstract: A model is proposed that describes variation of the shape of nanoislands grown by method of selective epitaxy. The model is based on minimization of the system surface energy at a given volume. In terms of the adopted morphology, the island is bounded by (101) and (112) side facets and a (001) top facet with varying dimensions dependent on the volume. Areas, lengths, and aspect ratios of competing facets are calculated as functions of the island volume.",
keywords = "island shape, selective epitaxy, surface energy",
author = "Dubrovskii, {V. G.}",
note = "Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = oct,
doi = "10.1134/S1063785021070191",
language = "English",
volume = "47",
pages = "701--704",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "10",

}

RIS

TY - JOUR

T1 - Nanoisland Shape Variation during Selective Epitaxy

AU - Dubrovskii, V. G.

N1 - Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/10

Y1 - 2021/10

N2 - Abstract: A model is proposed that describes variation of the shape of nanoislands grown by method of selective epitaxy. The model is based on minimization of the system surface energy at a given volume. In terms of the adopted morphology, the island is bounded by (101) and (112) side facets and a (001) top facet with varying dimensions dependent on the volume. Areas, lengths, and aspect ratios of competing facets are calculated as functions of the island volume.

AB - Abstract: A model is proposed that describes variation of the shape of nanoislands grown by method of selective epitaxy. The model is based on minimization of the system surface energy at a given volume. In terms of the adopted morphology, the island is bounded by (101) and (112) side facets and a (001) top facet with varying dimensions dependent on the volume. Areas, lengths, and aspect ratios of competing facets are calculated as functions of the island volume.

KW - island shape

KW - selective epitaxy

KW - surface energy

UR - http://www.scopus.com/inward/record.url?scp=85121467230&partnerID=8YFLogxK

U2 - 10.1134/S1063785021070191

DO - 10.1134/S1063785021070191

M3 - Article

AN - SCOPUS:85121467230

VL - 47

SP - 701

EP - 704

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 10

ER -

ID: 96849343