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Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire. / Barettin, Daniele; Shtrom, Igor V.; Reznik, Rodion R.; Cirlin, George E.

In: Nanomaterials, Vol. 13, No. 11, 1737, 25.05.2023.

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@article{a5769a9c0f1c4bedaf317f1838258864,
title = "Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire",
abstract = "We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.",
keywords = "(Formula presented.), GaAs/AlGaAs, nanowires, quantum dots, wurtize",
author = "Daniele Barettin and Shtrom, {Igor V.} and Reznik, {Rodion R.} and Cirlin, {George E.}",
year = "2023",
month = may,
day = "25",
doi = "DOI: 10.3390/nano13111737",
language = "English",
volume = "13",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "11",

}

RIS

TY - JOUR

T1 - Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

AU - Barettin, Daniele

AU - Shtrom, Igor V.

AU - Reznik, Rodion R.

AU - Cirlin, George E.

PY - 2023/5/25

Y1 - 2023/5/25

N2 - We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.

AB - We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.

KW - (Formula presented.)

KW - GaAs/AlGaAs

KW - nanowires

KW - quantum dots

KW - wurtize

UR - https://www.mendeley.com/catalogue/8bbc67c6-0ca8-3b1a-a00f-edd1fee2baf0/

U2 - DOI: 10.3390/nano13111737

DO - DOI: 10.3390/nano13111737

M3 - Article

C2 - 37299640

VL - 13

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 11

M1 - 1737

ER -

ID: 107099215