MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate

DOI

https://doi.org/10.1109/LO.2016.7549902
Final published version

R. R. Reznik
K. P. Kotlyar
I. V. Ilkiv
S. A. Kukushkin
A. V. Osipov
I. P. Soshnikov
E. V. Nikitina
G. E. Cirlin

The fundamental possibility of the MBE GaN nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting system have been studied and compared properties of GaN nanowires on silicon substrate.

Original language	English
Title of host publication	Proceedings - 2016 International Conference Laser Optics, LO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	R92
ISBN (Electronic)	9781467397353
DOIs	https://doi.org/10.1109/LO.2016.7549902
State	Published - 23 Aug 2016
Event	2016 International Conference Laser Optics, LO 2016 - St. Petersburg, Russian Federation Duration: 26 Jun 2016 → 30 Jun 2016

Publication series

Name	Proceedings - 2016 International Conference Laser Optics, LO 2016

Conference

Conference	2016 International Conference Laser Optics, LO 2016
Country/Territory	Russian Federation
City	St. Petersburg
Period	26/06/16 → 30/06/16

Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Research areas

molecular-beam epitaxy, nanostructures, nanowires, semiconductors, silicon, silicon carbide

ID: 99722504