Light quenching of photoluminescence in hybrid films of InP/InAsP/InP nanowires and CdSe/ZnS colloidal quantum dots

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Light quenching of photoluminescence in hybrid films of InP/InAsP/InP nanowires and CdSe/ZnS colloidal quantum dots. / Khrebtov, A. I.; Kulagina, A. S.; Dragunova, A. S.; Reznik, R. R.; Cirlin, G. E.; Danilov, V. V.

In: Optical Materials, Vol. 127, 112277, 05.2022.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{e6f2569ed3164c70aff63e5e11e65871,

title = "Light quenching of photoluminescence in hybrid films of InP/InAsP/InP nanowires and CdSe/ZnS colloidal quantum dots",

abstract = "We investigate the photoluminescence of a film obtained by the uniform deposition of a colloidal solution of CdSe/ZnS quantum dots capped by trioctylphosphine oxide on an array of isolated InP/InAsP/InP nanowires and subsequently removed from the substrate. The photoluminescence spectrum of the film shows emission bands corresponding to InAsP nano-insertions (1.25–1.5 μm) and quantum wells (1.0–1.2 μm). We find that the dependence of the photoluminescence intensity on the excitation intensity has a nonlinear character, which we interpret as a manifestation of the light quenching effect, and that the photodynamics of excitation of the nano-insertions and quantum wells differ from each other. We analyse the light quenching effect taking into account the significant increase in the luminescence intensity observed in such hybrid film as compared to an array of isolated InP/InAsP/InP nanowires. We hypothesize the possible suppression of Auger relaxation due to multistep nonradiative transfer of excitation.",

keywords = "Auger recombination, Hybrid semiconductor nanostructures, Light quenching, Luminescence, Photodynamics, Thin films",

author = "Khrebtov, {A. I.} and Kulagina, {A. S.} and Dragunova, {A. S.} and Reznik, {R. R.} and Cirlin, {G. E.} and Danilov, {V. V.}",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = may,

doi = "10.1016/j.optmat.2022.112277",

language = "English",

volume = "127",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Light quenching of photoluminescence in hybrid films of InP/InAsP/InP nanowires and CdSe/ZnS colloidal quantum dots

AU - Khrebtov, A. I.

AU - Kulagina, A. S.

AU - Dragunova, A. S.

AU - Reznik, R. R.

AU - Cirlin, G. E.

AU - Danilov, V. V.

PY - 2022/5

Y1 - 2022/5

N2 - We investigate the photoluminescence of a film obtained by the uniform deposition of a colloidal solution of CdSe/ZnS quantum dots capped by trioctylphosphine oxide on an array of isolated InP/InAsP/InP nanowires and subsequently removed from the substrate. The photoluminescence spectrum of the film shows emission bands corresponding to InAsP nano-insertions (1.25–1.5 μm) and quantum wells (1.0–1.2 μm). We find that the dependence of the photoluminescence intensity on the excitation intensity has a nonlinear character, which we interpret as a manifestation of the light quenching effect, and that the photodynamics of excitation of the nano-insertions and quantum wells differ from each other. We analyse the light quenching effect taking into account the significant increase in the luminescence intensity observed in such hybrid film as compared to an array of isolated InP/InAsP/InP nanowires. We hypothesize the possible suppression of Auger relaxation due to multistep nonradiative transfer of excitation.

AB - We investigate the photoluminescence of a film obtained by the uniform deposition of a colloidal solution of CdSe/ZnS quantum dots capped by trioctylphosphine oxide on an array of isolated InP/InAsP/InP nanowires and subsequently removed from the substrate. The photoluminescence spectrum of the film shows emission bands corresponding to InAsP nano-insertions (1.25–1.5 μm) and quantum wells (1.0–1.2 μm). We find that the dependence of the photoluminescence intensity on the excitation intensity has a nonlinear character, which we interpret as a manifestation of the light quenching effect, and that the photodynamics of excitation of the nano-insertions and quantum wells differ from each other. We analyse the light quenching effect taking into account the significant increase in the luminescence intensity observed in such hybrid film as compared to an array of isolated InP/InAsP/InP nanowires. We hypothesize the possible suppression of Auger relaxation due to multistep nonradiative transfer of excitation.

KW - Auger recombination

KW - Hybrid semiconductor nanostructures

KW - Light quenching

KW - Luminescence

KW - Photodynamics

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85127149270&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/69255d3f-a662-37ea-bf3e-d1ba33693656/

U2 - 10.1016/j.optmat.2022.112277

DO - 10.1016/j.optmat.2022.112277

M3 - Article

AN - SCOPUS:85127149270

VL - 127

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

M1 - 112277

ER -

ID: 96849670