We present the results of experiments on annealing the surface layer of porous silicon by pulsed IR laser radiation. The character of laser-induced modification has been studied using IR spectroscopy and transmission electron microscopy. It is shown that the proposed method can be used to obtain a Si:SiO2 composite.

Original languageEnglish
Pages (from-to)1065-1068
Number of pages4
JournalTechnical Physics Letters
Volume33
Issue number12
DOIs
StatePublished - Dec 2007

    Scopus subject areas

  • Physics and Astronomy (miscellaneous)

ID: 86117772