Research output: Contribution to journal › Article › peer-review
We present the results of experiments on annealing the surface layer of porous silicon by pulsed IR laser radiation. The character of laser-induced modification has been studied using IR spectroscopy and transmission electron microscopy. It is shown that the proposed method can be used to obtain a Si:SiO2 composite.
Original language | English |
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Pages (from-to) | 1065-1068 |
Number of pages | 4 |
Journal | Technical Physics Letters |
Volume | 33 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2007 |
ID: 86117772