Research output: Contribution to journal › Conference article
Influence of α-particles irradiation on the properties and performance of silicon semiconductor detectors. / Bakhlanov, S. V.; Bazlov, N. V.; Chernobrovkin, I. D.; Derbin, A. V.; Drachnev, I. S.; Kotina, I. M.; Konkov, O. I.; Kuzmichev, A. M.; Mikulich, M. S.; Muratova, V. N.; Trushin, M. V.; Unzhakov, E. V.
In: Journal of Physics: Conference Series, Vol. 2103, No. 1, 012139, 14.12.2021.Research output: Contribution to journal › Conference article
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TY - JOUR
T1 - Influence of α-particles irradiation on the properties and performance of silicon semiconductor detectors
AU - Bakhlanov, S. V.
AU - Bazlov, N. V.
AU - Chernobrovkin, I. D.
AU - Derbin, A. V.
AU - Drachnev, I. S.
AU - Kotina, I. M.
AU - Konkov, O. I.
AU - Kuzmichev, A. M.
AU - Mikulich, M. S.
AU - Muratova, V. N.
AU - Trushin, M. V.
AU - Unzhakov, E. V.
PY - 2021/12/14
Y1 - 2021/12/14
N2 - Deterioration of the operation parameters of p-type Si surface-barrier detector and Si(Li) p-i-n detector upon irradiation by alpha-particles was investigated. The detectors were irradiated at room temperature up to a total number of the registered α-particles Nα equal to 6 × 109. Prolonged irradiation has resulted in a deterioration of the detectors energy resolution ability and it was found that the increase of α-peaks broadening can be described by a linear function of Nα with a slope Δσ/ΔNα ~ (1.4-1.8) × 10-9 keV/α for both detectors. Resolution deterioration was associated with the increase of the detectors leakage current, which proceeds linearly with the number of absorbed α-particles with the slope ΔI/ΔNα ~ (7-17) × 10-17 A/α. The increase of the detectors reverse current was related with appearance of radiation-induced defect level at 0.56 eV above the valence band.
AB - Deterioration of the operation parameters of p-type Si surface-barrier detector and Si(Li) p-i-n detector upon irradiation by alpha-particles was investigated. The detectors were irradiated at room temperature up to a total number of the registered α-particles Nα equal to 6 × 109. Prolonged irradiation has resulted in a deterioration of the detectors energy resolution ability and it was found that the increase of α-peaks broadening can be described by a linear function of Nα with a slope Δσ/ΔNα ~ (1.4-1.8) × 10-9 keV/α for both detectors. Resolution deterioration was associated with the increase of the detectors leakage current, which proceeds linearly with the number of absorbed α-particles with the slope ΔI/ΔNα ~ (7-17) × 10-17 A/α. The increase of the detectors reverse current was related with appearance of radiation-induced defect level at 0.56 eV above the valence band.
UR - http://www.scopus.com/inward/record.url?scp=85123490317&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/2103/1/012139
DO - 10.1088/1742-6596/2103/1/012139
M3 - Conference article
AN - SCOPUS:85123490317
VL - 2103
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012139
T2 - International Conference PhysicA.SPb/2021
Y2 - 18 October 2021 through 22 October 2021
ER -
ID: 105514280