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Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector. / Bakhlanov, S. V.; Bazlov, N. V.; Danilov, D. V.; Derbin, A. V.; Drachnev, I. S.; Kotina, I. M.; Konkov, O. I.; Kuzmichev, A. M.; Mikulich, M. S.; Muratova, V. N.; Trushin, M. V.; Unzhakov, E. V.

2021.

Research output: Working paper › Preprint

Harvard

Bakhlanov, SV, Bazlov, NV, Danilov, DV, Derbin, AV, Drachnev, IS, Kotina, IM, Konkov, OI, Kuzmichev, AM, Mikulich, MS, Muratova, VN, Trushin, MV & Unzhakov, EV 2021 'Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector'.

APA

Bakhlanov, S. V., Bazlov, N. V., Danilov, D. V., Derbin, A. V., Drachnev, I. S., Kotina, I. M., Konkov, O. I., Kuzmichev, A. M., Mikulich, M. S., Muratova, V. N., Trushin, M. V., & Unzhakov, E. V. (2021). Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector.

Vancouver

Bakhlanov SV, Bazlov NV, Danilov DV, Derbin AV, Drachnev IS, Kotina IM et al. Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector. 2021 Jan 11.

Author

Bakhlanov, S. V. ; Bazlov, N. V. ; Danilov, D. V. ; Derbin, A. V. ; Drachnev, I. S. ; Kotina, I. M. ; Konkov, O. I. ; Kuzmichev, A. M. ; Mikulich, M. S. ; Muratova, V. N. ; Trushin, M. V. ; Unzhakov, E. V. / Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector. 2021.

BibTeX

@techreport{0e173412ba894dab993663e5c90d8c93,
title = "Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector",
abstract = " Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9 {\alpha}-particles, an increase of {\alpha}-peak FWHM from 70 keV to 100 keV was observed and explained by increase of the detector reverse current due to formation of a high concentration of near mid-gap defect levels. Performed CV measurements revealed the appearance of at least 6*10^12 cm-3 radiation-induced acceptors at the depths where according to the TRIM simulations the highest concentration of vacancy-interstitial pairs was created by the incoming {\alpha}-particles. The studies carried out by current-DLTS technique allowed to associate the observed increase of the acceptor concentration with the near mid-gap acceptor level at EV+0.56 eV. This level can be apparently associated with V2O defects recognized previously to be responsible for the space charge sign inversion in the irradiated n-type Si detectors. ",
keywords = "physics.ins-det, cond-mat.mtrl-sci, nucl-ex",
author = "Bakhlanov, {S. V.} and Bazlov, {N. V.} and Danilov, {D. V.} and Derbin, {A. V.} and Drachnev, {I. S.} and Kotina, {I. M.} and Konkov, {O. I.} and Kuzmichev, {A. M.} and Mikulich, {M. S.} and Muratova, {V. N.} and Trushin, {M. V.} and Unzhakov, {E. V.}",
note = "8 pages, 4 figures",
year = "2021",
month = jan,
day = "11",
language = "English",
type = "WorkingPaper",

}

RIS

TY - UNPB

T1 - Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector

AU - Bakhlanov, S. V.

AU - Bazlov, N. V.

AU - Danilov, D. V.

AU - Derbin, A. V.

AU - Drachnev, I. S.

AU - Kotina, I. M.

AU - Konkov, O. I.

AU - Kuzmichev, A. M.

AU - Mikulich, M. S.

AU - Muratova, V. N.

AU - Trushin, M. V.

AU - Unzhakov, E. V.

N1 - 8 pages, 4 figures

PY - 2021/1/11

Y1 - 2021/1/11

N2 - Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9 {\alpha}-particles, an increase of {\alpha}-peak FWHM from 70 keV to 100 keV was observed and explained by increase of the detector reverse current due to formation of a high concentration of near mid-gap defect levels. Performed CV measurements revealed the appearance of at least 6*10^12 cm-3 radiation-induced acceptors at the depths where according to the TRIM simulations the highest concentration of vacancy-interstitial pairs was created by the incoming {\alpha}-particles. The studies carried out by current-DLTS technique allowed to associate the observed increase of the acceptor concentration with the near mid-gap acceptor level at EV+0.56 eV. This level can be apparently associated with V2O defects recognized previously to be responsible for the space charge sign inversion in the irradiated n-type Si detectors.

AB - Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9 {\alpha}-particles, an increase of {\alpha}-peak FWHM from 70 keV to 100 keV was observed and explained by increase of the detector reverse current due to formation of a high concentration of near mid-gap defect levels. Performed CV measurements revealed the appearance of at least 6*10^12 cm-3 radiation-induced acceptors at the depths where according to the TRIM simulations the highest concentration of vacancy-interstitial pairs was created by the incoming {\alpha}-particles. The studies carried out by current-DLTS technique allowed to associate the observed increase of the acceptor concentration with the near mid-gap acceptor level at EV+0.56 eV. This level can be apparently associated with V2O defects recognized previously to be responsible for the space charge sign inversion in the irradiated n-type Si detectors.

KW - physics.ins-det

KW - cond-mat.mtrl-sci

KW - nucl-ex

M3 - Preprint

BT - Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector

ER -

ID: 86189266