Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

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Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources. / Cirlin, G. E.; Reznik, R. R.; Shtrom, I. V.; Khrebtov, A. I.; Samsonenko, Yu B.; Kukushkin, S. A.; Kasama, T.; Akopian, N.; Leonardo, L.

In: Semiconductors, Vol. 52, No. 4, 01.04.2018, p. 462-464.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{d8f0fe9f10c44d3c8365367104283a65,

title = "Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources",

abstract = "III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.",

author = "Cirlin, {G. E.} and Reznik, {R. R.} and Shtrom, {I. V.} and Khrebtov, {A. I.} and Samsonenko, {Yu B.} and Kukushkin, {S. A.} and T. Kasama and N. Akopian and L. Leonardo",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = apr,

day = "1",

doi = "10.1134/S1063782618040103",

language = "English",

volume = "52",

pages = "462--464",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "4",

}

RIS

TY - JOUR

T1 - Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

AU - Cirlin, G. E.

AU - Reznik, R. R.

AU - Shtrom, I. V.

AU - Khrebtov, A. I.

AU - Samsonenko, Yu B.

AU - Kukushkin, S. A.

AU - Kasama, T.

AU - Akopian, N.

AU - Leonardo, L.

PY - 2018/4/1

Y1 - 2018/4/1

N2 - III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

AB - III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

UR - http://www.scopus.com/inward/record.url?scp=85045266372&partnerID=8YFLogxK

U2 - 10.1134/S1063782618040103

DO - 10.1134/S1063782618040103

M3 - Article

AN - SCOPUS:85045266372

VL - 52

SP - 462

EP - 464

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -

ID: 98508929