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Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon. / Cirlin, G. E.; Shtrom, I. V.; Reznik, R. R.; Samsonenko, Yu B.; Khrebtov, A. I.; Bouravleuv, A. D.; Soshnikov, I. P.

In: Semiconductors, Vol. 50, No. 11, 01.11.2016, p. 1421-1424.

Research output: Contribution to journal › Article › peer-review

Harvard

Cirlin, GE, Shtrom, IV, Reznik, RR, Samsonenko, YB, Khrebtov, AI, Bouravleuv, AD & Soshnikov, IP 2016, 'Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon', Semiconductors, vol. 50, no. 11, pp. 1421-1424. https://doi.org/10.1134/S1063782616110257

APA

Cirlin, G. E., Shtrom, I. V., Reznik, R. R., Samsonenko, Y. B., Khrebtov, A. I., Bouravleuv, A. D., & Soshnikov, I. P. (2016). Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon. Semiconductors, 50(11), 1421-1424. https://doi.org/10.1134/S1063782616110257

Vancouver

Cirlin GE, Shtrom IV, Reznik RR, Samsonenko YB, Khrebtov AI, Bouravleuv AD et al. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon. Semiconductors. 2016 Nov 1;50(11):1421-1424. https://doi.org/10.1134/S1063782616110257

Author

Cirlin, G. E. ; Shtrom, I. V. ; Reznik, R. R. ; Samsonenko, Yu B. ; Khrebtov, A. I. ; Bouravleuv, A. D. ; Soshnikov, I. P. / Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon. In: Semiconductors. 2016 ; Vol. 50, No. 11. pp. 1421-1424.

BibTeX

@article{38dde0a0fa3b4677a526ade7d40c4455,
title = "Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon",
abstract = "Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.",
author = "Cirlin, {G. E.} and Shtrom, {I. V.} and Reznik, {R. R.} and Samsonenko, {Yu B.} and Khrebtov, {A. I.} and Bouravleuv, {A. D.} and Soshnikov, {I. P.}",
note = "Publisher Copyright: {\textcopyright} Pleiades Publishing, Ltd., 2016.",
year = "2016",
month = nov,
day = "1",
doi = "10.1134/S1063782616110257",
language = "English",
volume = "50",
pages = "1421--1424",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "11",

}

RIS

TY - JOUR

T1 - Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

AU - Cirlin, G. E.

AU - Shtrom, I. V.

AU - Reznik, R. R.

AU - Samsonenko, Yu B.

AU - Khrebtov, A. I.

AU - Bouravleuv, A. D.

AU - Soshnikov, I. P.

N1 - Publisher Copyright: © Pleiades Publishing, Ltd., 2016.

PY - 2016/11/1

Y1 - 2016/11/1

N2 - Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.

AB - Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.

UR - http://www.scopus.com/inward/record.url?scp=85011344615&partnerID=8YFLogxK

U2 - 10.1134/S1063782616110257

DO - 10.1134/S1063782616110257

M3 - Article

AN - SCOPUS:85011344615

VL - 50

SP - 1421

EP - 1424

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 99722174