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High-current breakdown of the quantum hall effect. / Matthews, A. J.; Kavokin, K. V.; Usher, A.; Portnoi, M. E.; Gething, J. D.; Zhu, M.; Ritchie, D. A.

PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 557-558 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Harvard

Matthews, AJ, Kavokin, KV, Usher, A, Portnoi, ME, Gething, JD, Zhu, M & Ritchie, DA 2005, High-current breakdown of the quantum hall effect. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 557-558, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 26/07/04. https://doi.org/10.1063/1.1994229

APA

Matthews, A. J., Kavokin, K. V., Usher, A., Portnoi, M. E., Gething, J. D., Zhu, M., & Ritchie, D. A. (2005). High-current breakdown of the quantum hall effect. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 557-558). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994229

Vancouver

Matthews AJ, Kavokin KV, Usher A, Portnoi ME, Gething JD, Zhu M et al. High-current breakdown of the quantum hall effect. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 557-558. (AIP Conference Proceedings). https://doi.org/10.1063/1.1994229

Author

Matthews, A. J. ; Kavokin, K. V. ; Usher, A. ; Portnoi, M. E. ; Gething, J. D. ; Zhu, M. ; Ritchie, D. A. / High-current breakdown of the quantum hall effect. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. pp. 557-558 (AIP Conference Proceedings).

BibTeX

@inproceedings{90405c4d9d1b4c759a8f4a8a6165e578,
title = "High-current breakdown of the quantum hall effect",
abstract = "We have recently developed a model for the high-current breakdown of the integer quantum Hall effect, as measured in contactless experiments using a highly-sensitive torsion balance magnetometer. The model predicts that, for low-mobility samples, the critical current for breakdown should decrease linearly with temperature. This prediction is verified experimentally with the addition of a low-temperature (< ∼ 300 mK) saturation of the critical current. This saturation is consistent with quasi-elastic inter-Landau-level scattering when the maximum electric field in the sample reaches a large enough value. Here we extend this model to 'nearly' integer filling factors to show how the model may account for the shape of the magnetisation signal.",
author = "Matthews, {A. J.} and Kavokin, {K. V.} and A. Usher and Portnoi, {M. E.} and Gething, {J. D.} and M. Zhu and Ritchie, {D. A.}",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994229",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "557--558",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

RIS

TY - GEN

T1 - High-current breakdown of the quantum hall effect

AU - Matthews, A. J.

AU - Kavokin, K. V.

AU - Usher, A.

AU - Portnoi, M. E.

AU - Gething, J. D.

AU - Zhu, M.

AU - Ritchie, D. A.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - We have recently developed a model for the high-current breakdown of the integer quantum Hall effect, as measured in contactless experiments using a highly-sensitive torsion balance magnetometer. The model predicts that, for low-mobility samples, the critical current for breakdown should decrease linearly with temperature. This prediction is verified experimentally with the addition of a low-temperature (< ∼ 300 mK) saturation of the critical current. This saturation is consistent with quasi-elastic inter-Landau-level scattering when the maximum electric field in the sample reaches a large enough value. Here we extend this model to 'nearly' integer filling factors to show how the model may account for the shape of the magnetisation signal.

AB - We have recently developed a model for the high-current breakdown of the integer quantum Hall effect, as measured in contactless experiments using a highly-sensitive torsion balance magnetometer. The model predicts that, for low-mobility samples, the critical current for breakdown should decrease linearly with temperature. This prediction is verified experimentally with the addition of a low-temperature (< ∼ 300 mK) saturation of the critical current. This saturation is consistent with quasi-elastic inter-Landau-level scattering when the maximum electric field in the sample reaches a large enough value. Here we extend this model to 'nearly' integer filling factors to show how the model may account for the shape of the magnetisation signal.

UR - http://www.scopus.com/inward/record.url?scp=33749493878&partnerID=8YFLogxK

U2 - 10.1063/1.1994229

DO - 10.1063/1.1994229

M3 - Conference contribution

AN - SCOPUS:33749493878

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 557

EP - 558

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

ID: 39910619