Standard

Heavy fullerenes for semiconducting photodiodes operating at 1.5-5.0 μm wavelengths. / Sherstnev, V. V.; Charykov, N. A.; Semenov, K. N.; Alekseev, N. I.; Keskinov, V. A.; Krokhina, O. A.

In: Russian Journal of Physical Chemistry A, Vol. 85, No. 6, 06.2011, p. 1016-1020.

Research output: Contribution to journal › Article › peer-review

Harvard

Sherstnev, VV, Charykov, NA, Semenov, KN, Alekseev, NI, Keskinov, VA & Krokhina, OA 2011, 'Heavy fullerenes for semiconducting photodiodes operating at 1.5-5.0 μm wavelengths', Russian Journal of Physical Chemistry A, vol. 85, no. 6, pp. 1016-1020. https://doi.org/10.1134/S0036024411060288, https://doi.org/10.1134/S0036024411060288

APA

Sherstnev, V. V., Charykov, N. A., Semenov, K. N., Alekseev, N. I., Keskinov, V. A., & Krokhina, O. A. (2011). Heavy fullerenes for semiconducting photodiodes operating at 1.5-5.0 μm wavelengths. Russian Journal of Physical Chemistry A, 85(6), 1016-1020. https://doi.org/10.1134/S0036024411060288, https://doi.org/10.1134/S0036024411060288

Vancouver

Sherstnev VV, Charykov NA, Semenov KN, Alekseev NI, Keskinov VA, Krokhina OA. Heavy fullerenes for semiconducting photodiodes operating at 1.5-5.0 μm wavelengths. Russian Journal of Physical Chemistry A. 2011 Jun;85(6):1016-1020. https://doi.org/10.1134/S0036024411060288, https://doi.org/10.1134/S0036024411060288

Author

Sherstnev, V. V. ; Charykov, N. A. ; Semenov, K. N. ; Alekseev, N. I. ; Keskinov, V. A. ; Krokhina, O. A. / Heavy fullerenes for semiconducting photodiodes operating at 1.5-5.0 μm wavelengths. In: Russian Journal of Physical Chemistry A. 2011 ; Vol. 85, No. 6. pp. 1016-1020.

BibTeX

@article{8a3e8a31615c4d09a9e40e773304bd88,
title = "Heavy fullerenes for semiconducting photodiodes operating at 1.5-5.0 μm wavelengths",
abstract = "A new method for the passivation of the surface of infrared photodiodes operating at room temperature, spectral range 1.5-5.0 μm, by a mixture of higher fullerenes (h-f-mix) C76 + C78 + C84 + C90 + ⋯ was suggested. The main service characteristics of photodiodes were studied. The passivation of photodiodes decreased their dark current by 14%. The Peltier effect was observed for the A3B 5 semiconductor/h-f-mix heterojunction.",
keywords = "heavy fullerenes, Peltier effect, semiconducting photodiodes",
author = "Sherstnev, {V. V.} and Charykov, {N. A.} and Semenov, {K. N.} and Alekseev, {N. I.} and Keskinov, {V. A.} and Krokhina, {O. A.}",
note = "Funding Information: ACKNOWLEDGMENTS This work was financially supported by the Pro gram of the Presidium of Russian Academy of Sci ences “Basics of Fundamental Studies of Nanotech nologies and Nanomaterials,” the Russian Founda tion for Basic Research (project nos. 10 02 93110 NTsNIL_a, 10 02 00548 a, and 09 08 91224 ST_a), and state contract No. 02.740.11.0445. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",
year = "2011",
month = jun,
doi = "10.1134/S0036024411060288",
language = "English",
volume = "85",
pages = "1016--1020",
journal = "Russian Journal of Physical Chemistry A",
issn = "0036-0244",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "6",

}

RIS

TY - JOUR

T1 - Heavy fullerenes for semiconducting photodiodes operating at 1.5-5.0 μm wavelengths

AU - Sherstnev, V. V.

AU - Charykov, N. A.

AU - Semenov, K. N.

AU - Alekseev, N. I.

AU - Keskinov, V. A.

AU - Krokhina, O. A.

N1 - Funding Information: ACKNOWLEDGMENTS This work was financially supported by the Pro gram of the Presidium of Russian Academy of Sci ences “Basics of Fundamental Studies of Nanotech nologies and Nanomaterials,” the Russian Founda tion for Basic Research (project nos. 10 02 93110 NTsNIL_a, 10 02 00548 a, and 09 08 91224 ST_a), and state contract No. 02.740.11.0445. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/6

Y1 - 2011/6

N2 - A new method for the passivation of the surface of infrared photodiodes operating at room temperature, spectral range 1.5-5.0 μm, by a mixture of higher fullerenes (h-f-mix) C76 + C78 + C84 + C90 + ⋯ was suggested. The main service characteristics of photodiodes were studied. The passivation of photodiodes decreased their dark current by 14%. The Peltier effect was observed for the A3B 5 semiconductor/h-f-mix heterojunction.

AB - A new method for the passivation of the surface of infrared photodiodes operating at room temperature, spectral range 1.5-5.0 μm, by a mixture of higher fullerenes (h-f-mix) C76 + C78 + C84 + C90 + ⋯ was suggested. The main service characteristics of photodiodes were studied. The passivation of photodiodes decreased their dark current by 14%. The Peltier effect was observed for the A3B 5 semiconductor/h-f-mix heterojunction.

KW - heavy fullerenes

KW - Peltier effect

KW - semiconducting photodiodes

UR - http://www.scopus.com/inward/record.url?scp=79957949922&partnerID=8YFLogxK

U2 - 10.1134/S0036024411060288

DO - 10.1134/S0036024411060288

M3 - Article

VL - 85

SP - 1016

EP - 1020

JO - Russian Journal of Physical Chemistry A

JF - Russian Journal of Physical Chemistry A

SN - 0036-0244

IS - 6

ER -

ID: 5187670