Heavy fullerenes for semiconducting photodiodes operating at 1.5-5.0 μm wavelengths

Research output: Contribution to journal › Article › peer-review

Department of Solid State Chemistry

DOI

https://doi.org/10.1134/S0036024411060288
Other version
https://doi.org/10.1134/S0036024411060288
Final published version

V. V. Sherstnev
N. A. Charykov
K. N. Semenov
N. I. Alekseev
V. A. Keskinov
O. A. Krokhina

A new method for the passivation of the surface of infrared photodiodes operating at room temperature, spectral range 1.5-5.0 μm, by a mixture of higher fullerenes (h-f-mix) C₇₆ + C₇₈ + C₈₄ + C₉0 + ⋯ was suggested. The main service characteristics of photodiodes were studied. The passivation of photodiodes decreased their dark current by 14%. The Peltier effect was observed for the A³B ⁵ semiconductor/h-f-mix heterojunction.

Original language	English
Pages (from-to)	1016-1020
Number of pages	5
Journal	Russian Journal of Physical Chemistry A
Volume	85
Issue number	6
DOIs	https://doi.org/10.1134/S0036024411060288 https://doi.org/10.1134/S0036024411060288
State	Published - Jun 2011

Research areas

heavy fullerenes, Peltier effect, semiconducting photodiodes

Scopus subject areas

Physical and Theoretical Chemistry

ID: 5187670