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Growth mechanism of nanodimensional vanadium dioxide on silicon surface obtained by ML-ALD method. / Osmolowskaya, O.; Smirnov, V.

In: Reviews on Advanced Materials Science, Vol. 27, No. 2, 2011, p. 184-188.

Research output: Contribution to journal › Article › peer-review

Harvard

Osmolowskaya, O & Smirnov, V 2011, 'Growth mechanism of nanodimensional vanadium dioxide on silicon surface obtained by ML-ALD method', Reviews on Advanced Materials Science, vol. 27, no. 2, pp. 184-188.

APA

Osmolowskaya, O., & Smirnov, V. (2011). Growth mechanism of nanodimensional vanadium dioxide on silicon surface obtained by ML-ALD method. Reviews on Advanced Materials Science, 27(2), 184-188.

Vancouver

Osmolowskaya O, Smirnov V. Growth mechanism of nanodimensional vanadium dioxide on silicon surface obtained by ML-ALD method. Reviews on Advanced Materials Science. 2011;27(2):184-188.

Author

Osmolowskaya, O. ; Smirnov, V. / Growth mechanism of nanodimensional vanadium dioxide on silicon surface obtained by ML-ALD method. In: Reviews on Advanced Materials Science. 2011 ; Vol. 27, No. 2. pp. 184-188.

BibTeX

@article{21cc574eb246486e9fecb40b7998d7eb,
title = "Growth mechanism of nanodimensional vanadium dioxide on silicon surface obtained by ML-ALD method",
author = "O. Osmolowskaya and V. Smirnov",
year = "2011",
language = "не определен",
volume = "27",
pages = "184--188",
journal = "Reviews on Advanced Materials Science",
issn = "1606-5131",
publisher = "Институт проблем машиноведения РАН",
number = "2",

}

RIS

TY - JOUR

T1 - Growth mechanism of nanodimensional vanadium dioxide on silicon surface obtained by ML-ALD method

AU - Osmolowskaya, O.

AU - Smirnov, V.

PY - 2011

Y1 - 2011

M3 - статья

VL - 27

SP - 184

EP - 188

JO - Reviews on Advanced Materials Science

JF - Reviews on Advanced Materials Science

SN - 1606-5131

IS - 2

ER -

ID: 5116244