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FEATURES OF THE RELAXATION OF THE NONEQUILIBRIUM CAPACITANCE OF Si-SiO2 STRUCTURES IN INTENSE ELECTRIC FIELDS. / Baraban, A. P.; Tarantov, Yu A.

In: Soviet Microelectronics (English Translation of Mikroelektronika), Vol. 8, No. 4, 01.01.1979, p. 285-286.

Research output: Contribution to journal › Article › peer-review

Harvard

Baraban, AP & Tarantov, YA 1979, 'FEATURES OF THE RELAXATION OF THE NONEQUILIBRIUM CAPACITANCE OF Si-SiO2 STRUCTURES IN INTENSE ELECTRIC FIELDS.', Soviet Microelectronics (English Translation of Mikroelektronika), vol. 8, no. 4, pp. 285-286.

APA

Baraban, A. P., & Tarantov, Y. A. (1979). FEATURES OF THE RELAXATION OF THE NONEQUILIBRIUM CAPACITANCE OF Si-SiO2 STRUCTURES IN INTENSE ELECTRIC FIELDS. Soviet Microelectronics (English Translation of Mikroelektronika), 8(4), 285-286.

Vancouver

Baraban AP, Tarantov YA. FEATURES OF THE RELAXATION OF THE NONEQUILIBRIUM CAPACITANCE OF Si-SiO2 STRUCTURES IN INTENSE ELECTRIC FIELDS. Soviet Microelectronics (English Translation of Mikroelektronika). 1979 Jan 1;8(4):285-286.

Author

Baraban, A. P. ; Tarantov, Yu A. / FEATURES OF THE RELAXATION OF THE NONEQUILIBRIUM CAPACITANCE OF Si-SiO2 STRUCTURES IN INTENSE ELECTRIC FIELDS. In: Soviet Microelectronics (English Translation of Mikroelektronika). 1979 ; Vol. 8, No. 4. pp. 285-286.

BibTeX

@article{7706fa1f83184afaa78278614ad74716,
title = "FEATURES OF THE RELAXATION OF THE NONEQUILIBRIUM CAPACITANCE OF Si-SiO2 STRUCTURES IN INTENSE ELECTRIC FIELDS.",
abstract = "The relaxation of the nonequilibrium capacitance of the Si-SiO//2 structure is investigated in an electrolyte in a very high electric field (up to 1. 4:10**7 V/cm). The results obtained confirm the relation between accelaration of the relaxation of nonequilibrium capacitance in intense electric fields and the increase in the rate of generation of minority carriers.",
author = "Baraban, {A. P.} and Tarantov, {Yu A.}",
year = "1979",
month = jan,
day = "1",
language = "English",
volume = "8",
pages = "285--286",
journal = "МИКРОЭЛЕКТРОНИКА",
issn = "0544-1269",
publisher = "Издательство {"}Наука{"}",
number = "4",

}

RIS

TY - JOUR

T1 - FEATURES OF THE RELAXATION OF THE NONEQUILIBRIUM CAPACITANCE OF Si-SiO2 STRUCTURES IN INTENSE ELECTRIC FIELDS.

AU - Baraban, A. P.

AU - Tarantov, Yu A.

PY - 1979/1/1

Y1 - 1979/1/1

N2 - The relaxation of the nonequilibrium capacitance of the Si-SiO//2 structure is investigated in an electrolyte in a very high electric field (up to 1. 4:10**7 V/cm). The results obtained confirm the relation between accelaration of the relaxation of nonequilibrium capacitance in intense electric fields and the increase in the rate of generation of minority carriers.

AB - The relaxation of the nonequilibrium capacitance of the Si-SiO//2 structure is investigated in an electrolyte in a very high electric field (up to 1. 4:10**7 V/cm). The results obtained confirm the relation between accelaration of the relaxation of nonequilibrium capacitance in intense electric fields and the increase in the rate of generation of minority carriers.

UR - http://www.scopus.com/inward/record.url?scp=0018498785&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0018498785

VL - 8

SP - 285

EP - 286

JO - МИКРОЭЛЕКТРОНИКА

JF - МИКРОЭЛЕКТРОНИКА

SN - 0544-1269

IS - 4

ER -

ID: 47620885