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@article{b0617a59bb4c4a6ca1b781d7327629da,
title = "Features of the Ga 2O 3 Layers Synthesized on Silicon by Molecular Layering",
author = "Дмитриев, {Валентин Александрович} and Дрозд, {Арсений Викторович} and Барабан, {Александр Петрович} and Габис, {Игорь Евгеньевич} and Мошников, {В. А.}",
year = "2024",
month = nov,
day = "29",
doi = "10.1134/S1063774524602107",
language = "English",
volume = "69",
journal = "Crystallography Reports",
issn = "1063-7745",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "7",

}

RIS

TY - JOUR

T1 - Features of the Ga 2O 3 Layers Synthesized on Silicon by Molecular Layering

AU - Дмитриев, Валентин Александрович

AU - Дрозд, Арсений Викторович

AU - Барабан, Александр Петрович

AU - Габис, Игорь Евгеньевич

AU - Мошников, В. А.

PY - 2024/11/29

Y1 - 2024/11/29

U2 - 10.1134/S1063774524602107

DO - 10.1134/S1063774524602107

M3 - Article

VL - 69

JO - Crystallography Reports

JF - Crystallography Reports

SN - 1063-7745

IS - 7

M1 - 1

ER -

ID: 127777059