Standard

Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition. / Baraban, A. P.; Denisov, E. A.; Dmitriev, V. A.; Drozd, A. V.; Drozd, V. E.; Selivanov, A. A.; Seisyan, R. P.

In: Semiconductors, Vol. 54, No. 4, 01.04.2020, p. 506-510.

Research output: Contribution to journal › Article › peer-review

Harvard

Baraban, AP, Denisov, EA, Dmitriev, VA, Drozd, AV, Drozd, VE, Selivanov, AA & Seisyan, RP 2020, 'Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition', Semiconductors, vol. 54, no. 4, pp. 506-510. https://doi.org/10.1134/S106378262004003X

APA

Baraban, A. P., Denisov, E. A., Dmitriev, V. A., Drozd, A. V., Drozd, V. E., Selivanov, A. A., & Seisyan, R. P. (2020). Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition. Semiconductors, 54(4), 506-510. https://doi.org/10.1134/S106378262004003X

Vancouver

Baraban AP, Denisov EA, Dmitriev VA, Drozd AV, Drozd VE, Selivanov AA et al. Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition. Semiconductors. 2020 Apr 1;54(4):506-510. https://doi.org/10.1134/S106378262004003X

Author

Baraban, A. P. ; Denisov, E. A. ; Dmitriev, V. A. ; Drozd, A. V. ; Drozd, V. E. ; Selivanov, A. A. ; Seisyan, R. P. / Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition. In: Semiconductors. 2020 ; Vol. 54, No. 4. pp. 506-510.

BibTeX

@article{73a7918b228544a1b6fde5d1f6c94e3f,
title = "Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition",
abstract = "The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has a number of advantages. The main advantages are a low growth temperature, high-quality interface with a silicon substrate, and high growth rate of films. Studies by cathodoluminescence made it possible to evaluate the structural quality of silicon-oxide layers produced by molecular layering and confirmed the potential of this method in obtaining high-quality silicon-oxide films for broad practical application.",
keywords = "catalytic synthesis, cathodoluminescence, low temperature synthesis, molecular layering, silicon oxide, spectral distribution, ELECTROLUMINESCENCE",
author = "Baraban, {A. P.} and Denisov, {E. A.} and Dmitriev, {V. A.} and Drozd, {A. V.} and Drozd, {V. E.} and Selivanov, {A. A.} and Seisyan, {R. P.}",
year = "2020",
month = apr,
day = "1",
doi = "10.1134/S106378262004003X",
language = "English",
volume = "54",
pages = "506--510",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "4",

}

RIS

TY - JOUR

T1 - Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition

AU - Baraban, A. P.

AU - Denisov, E. A.

AU - Dmitriev, V. A.

AU - Drozd, A. V.

AU - Drozd, V. E.

AU - Selivanov, A. A.

AU - Seisyan, R. P.

PY - 2020/4/1

Y1 - 2020/4/1

N2 - The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has a number of advantages. The main advantages are a low growth temperature, high-quality interface with a silicon substrate, and high growth rate of films. Studies by cathodoluminescence made it possible to evaluate the structural quality of silicon-oxide layers produced by molecular layering and confirmed the potential of this method in obtaining high-quality silicon-oxide films for broad practical application.

AB - The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has a number of advantages. The main advantages are a low growth temperature, high-quality interface with a silicon substrate, and high growth rate of films. Studies by cathodoluminescence made it possible to evaluate the structural quality of silicon-oxide layers produced by molecular layering and confirmed the potential of this method in obtaining high-quality silicon-oxide films for broad practical application.

KW - catalytic synthesis

KW - cathodoluminescence

KW - low temperature synthesis

KW - molecular layering

KW - silicon oxide

KW - spectral distribution

KW - ELECTROLUMINESCENCE

UR - http://www.scopus.com/inward/record.url?scp=85083966619&partnerID=8YFLogxK

U2 - 10.1134/S106378262004003X

DO - 10.1134/S106378262004003X

M3 - Article

AN - SCOPUS:85083966619

VL - 54

SP - 506

EP - 510

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -

ID: 53454469