DOI

We investigated the formation of nanopores in silicon nitride membrane by means of wet etching. The membrane was irradiated with focused helium ion beam using helium ion microscope, and then etched in hydrofluoric acid. Nanopores were investigated with transmission electron microscope. The pores with a diameter from 10 to 100 nm were obtained. Dependence of the pore diameter on the number of helium ions was investigated and compared with space distribution of radiation-induced defects, which was obtained from Monte-Carlo simulation.

Original languageEnglish
Title of host publicationState-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018
EditorsYuri Petrov, Oleg Vyvenko
PublisherAmerican Institute of Physics
Number of pages5
Volume2064
ISBN (Electronic)9780735417922
ISBN (Print)9780735417922
DOIs
StatePublished - 15 Jan 2019
EventInternational Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018 - Moscow, Russian Federation
Duration: 17 Oct 201819 Oct 2018

Publication series

NameAIP Conference Proceedings
PublisherAMER INST PHYSICS
Volume2064
ISSN (Print)0094-243X

Conference

ConferenceInternational Conference on State-of-the-Art Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN 2018
Country/TerritoryRussian Federation
CityMoscow
Period17/10/1819/10/18

    Scopus subject areas

  • Physics and Astronomy(all)

    Research areas

  • SIO2, IMPLANTATION

ID: 38366873