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Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2. / Kaveev, A. K.; Banshchikov, A. G.; Terpitskiy, A. N.; Golyashov, V. A.; Tereshchenko, O. E.; Kokh, K. A.; Estyunin, D. A.; Shikin, A. M.

In: Semiconductors, Vol. 54, No. 9, 01.09.2020, p. 1051-1055.

Research output: Contribution to journal › Article › peer-review

Harvard

Kaveev, AK, Banshchikov, AG, Terpitskiy, AN, Golyashov, VA, Tereshchenko, OE, Kokh, KA, Estyunin, DA & Shikin, AM 2020, 'Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2', Semiconductors, vol. 54, no. 9, pp. 1051-1055. https://doi.org/10.1134/S1063782620090146

APA

Kaveev, A. K., Banshchikov, A. G., Terpitskiy, A. N., Golyashov, V. A., Tereshchenko, O. E., Kokh, K. A., Estyunin, D. A., & Shikin, A. M. (2020). Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2. Semiconductors, 54(9), 1051-1055. https://doi.org/10.1134/S1063782620090146

Vancouver

Kaveev AK, Banshchikov AG, Terpitskiy AN, Golyashov VA, Tereshchenko OE, Kokh KA et al. Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2. Semiconductors. 2020 Sep 1;54(9):1051-1055. https://doi.org/10.1134/S1063782620090146

Author

Kaveev, A. K. ; Banshchikov, A. G. ; Terpitskiy, A. N. ; Golyashov, V. A. ; Tereshchenko, O. E. ; Kokh, K. A. ; Estyunin, D. A. ; Shikin, A. M. / Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2. In: Semiconductors. 2020 ; Vol. 54, No. 9. pp. 1051-1055.

BibTeX

@article{e55b2d1ed63a45cd8a6736b447788bbe,
title = "Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2",
abstract = "It is shown for the first time that Co subnanometer coatings deposited by molecular-beam epitaxy on the (0001) surface of the topological insulator BiSbTeSe(2)at a temperature of 330 degrees C open an energy gap in the spectrum of topological surface states in the region of the Dirac point with a shift of the Dirac-point position caused by the preliminary deposition of an adsorbate at room temperature. The gap width is 21 +/- 6 meV. Temperature-dependent measurements in the range of 15-150 K show no changes in the energy-gap width.",
keywords = "doping, energy gap at the Dirac point, spintronics, topological insulators",
author = "Kaveev, {A. K.} and Banshchikov, {A. G.} and Terpitskiy, {A. N.} and Golyashov, {V. A.} and Tereshchenko, {O. E.} and Kokh, {K. A.} and Estyunin, {D. A.} and Shikin, {A. M.}",
note = "Funding Information: This work was supported by the Russian Foundation for Basic Research, grant no. 17-02-00729. Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; XXIV Symposium “Nanophysics and Nanoelectronics” ; Conference date: 10-03-2020 Through 12-03-2020",
year = "2020",
month = sep,
day = "1",
doi = "10.1134/S1063782620090146",
language = "English",
volume = "54",
pages = "1051--1055",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "9",

}

RIS

TY - JOUR

T1 - Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2

AU - Kaveev, A. K.

AU - Banshchikov, A. G.

AU - Terpitskiy, A. N.

AU - Golyashov, V. A.

AU - Tereshchenko, O. E.

AU - Kokh, K. A.

AU - Estyunin, D. A.

AU - Shikin, A. M.

N1 - Funding Information: This work was supported by the Russian Foundation for Basic Research, grant no. 17-02-00729. Publisher Copyright: © 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - It is shown for the first time that Co subnanometer coatings deposited by molecular-beam epitaxy on the (0001) surface of the topological insulator BiSbTeSe(2)at a temperature of 330 degrees C open an energy gap in the spectrum of topological surface states in the region of the Dirac point with a shift of the Dirac-point position caused by the preliminary deposition of an adsorbate at room temperature. The gap width is 21 +/- 6 meV. Temperature-dependent measurements in the range of 15-150 K show no changes in the energy-gap width.

AB - It is shown for the first time that Co subnanometer coatings deposited by molecular-beam epitaxy on the (0001) surface of the topological insulator BiSbTeSe(2)at a temperature of 330 degrees C open an energy gap in the spectrum of topological surface states in the region of the Dirac point with a shift of the Dirac-point position caused by the preliminary deposition of an adsorbate at room temperature. The gap width is 21 +/- 6 meV. Temperature-dependent measurements in the range of 15-150 K show no changes in the energy-gap width.

KW - doping

KW - energy gap at the Dirac point

KW - spintronics

KW - topological insulators

UR - http://www.scopus.com/inward/record.url?scp=85090330705&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/cccee9b7-1541-3db1-ac50-55ecc9b881b6/

U2 - 10.1134/S1063782620090146

DO - 10.1134/S1063782620090146

M3 - Article

AN - SCOPUS:85090330705

VL - 54

SP - 1051

EP - 1055

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

T2 - XXIV Symposium “Nanophysics and Nanoelectronics”

Y2 - 10 March 2020 through 12 March 2020

ER -

ID: 70829969