It is shown for the first time that Co subnanometer coatings deposited by molecular-beam epitaxy on the (0001) surface of the topological insulator BiSbTeSe(2)at a temperature of 330 degrees C open an energy gap in the spectrum of topological surface states in the region of the Dirac point with a shift of the Dirac-point position caused by the preliminary deposition of an adsorbate at room temperature. The gap width is 21 +/- 6 meV. Temperature-dependent measurements in the range of 15-150 K show no changes in the energy-gap width.

Original languageEnglish
Pages (from-to)1051-1055
Number of pages5
JournalSemiconductors
Volume54
Issue number9
DOIs
StatePublished - 1 Sep 2020
EventXXIV Symposium “Nanophysics and Nanoelectronics” - Nizhny Novgorod, Russian Federation
Duration: 10 Mar 202012 Mar 2020

    Research areas

  • doping, energy gap at the Dirac point, spintronics, topological insulators

    Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

ID: 70829969