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Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition. / Дмитриев, Валентин Александрович; Барабан, Александр Петрович; Дрозд, Виктор Евгеньевич; Петров, Юрий Владимирович; Прокофьев, Владимир Александрович.

In: OPTICS AND SPECTROSCOPY, Vol. 128, No. 2, 01.02.2020, p. 220-223.

Research output: Contribution to journal › Article › peer-review

Harvard

Дмитриев, ВА, Барабан, АП, Дрозд, ВЕ, Петров, ЮВ & Прокофьев, ВА 2020, 'Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition', OPTICS AND SPECTROSCOPY, vol. 128, no. 2, pp. 220-223. https://doi.org/10.1134/S0030400X20020046

APA

Дмитриев, В. А., Барабан, А. П., Дрозд, В. Е., Петров, Ю. В., & Прокофьев, В. А. (2020). Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition. OPTICS AND SPECTROSCOPY, 128(2), 220-223. https://doi.org/10.1134/S0030400X20020046

Vancouver

Дмитриев ВА, Барабан АП, Дрозд ВЕ, Петров ЮВ, Прокофьев ВА. Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition. OPTICS AND SPECTROSCOPY. 2020 Feb 1;128(2):220-223. https://doi.org/10.1134/S0030400X20020046

Author

Дмитриев, Валентин Александрович ; Барабан, Александр Петрович ; Дрозд, Виктор Евгеньевич ; Петров, Юрий Владимирович ; Прокофьев, Владимир Александрович. / Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition. In: OPTICS AND SPECTROSCOPY. 2020 ; Vol. 128, No. 2. pp. 220-223.

BibTeX

@article{29b731a4c5a24234833f13d1f9f54fbb,
title = "Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition",
abstract = "The possibility of using electroluminescence to study Si–Ta2O5 and Si–SiO2–Ta2O5 structures and obtain information on the electronic structure of the Ta2O5 layer and on the properties of the SiO2–Ta2O5 interface is shows. A model of the electronic structure of the Ta2O5 layer formed by molecular layer deposition is proposed, which explains the spectral distribution of luminescence independently of the method of its excitation. It is shown that the formation of a Ta2O5 layer on the surface of thermally oxidized silicon is accompanied by transformation in the near-surface SiO2 layer and by quenching of the luminescence band in the spectral region of 650 nm.",
keywords = "electroluminescence, electronic structure, molecular layer deposition, spectral distribution, CATHODOLUMINESCENCE",
author = "Дмитриев, {Валентин Александрович} and Барабан, {Александр Петрович} and Дрозд, {Виктор Евгеньевич} and Петров, {Юрий Владимирович} and Прокофьев, {Владимир Александрович}",
year = "2020",
month = feb,
day = "1",
doi = "10.1134/S0030400X20020046",
language = "English",
volume = "128",
pages = "220--223",
journal = "OPTICS AND SPECTROSCOPY",
issn = "0030-400X",
publisher = "Pleiades Publishing",
number = "2",

}

RIS

TY - JOUR

T1 - Electroluminescence of Ta2O5 Films Formed by Molecular Layer Deposition

AU - Дмитриев, Валентин Александрович

AU - Барабан, Александр Петрович

AU - Дрозд, Виктор Евгеньевич

AU - Петров, Юрий Владимирович

AU - Прокофьев, Владимир Александрович

PY - 2020/2/1

Y1 - 2020/2/1

N2 - The possibility of using electroluminescence to study Si–Ta2O5 and Si–SiO2–Ta2O5 structures and obtain information on the electronic structure of the Ta2O5 layer and on the properties of the SiO2–Ta2O5 interface is shows. A model of the electronic structure of the Ta2O5 layer formed by molecular layer deposition is proposed, which explains the spectral distribution of luminescence independently of the method of its excitation. It is shown that the formation of a Ta2O5 layer on the surface of thermally oxidized silicon is accompanied by transformation in the near-surface SiO2 layer and by quenching of the luminescence band in the spectral region of 650 nm.

AB - The possibility of using electroluminescence to study Si–Ta2O5 and Si–SiO2–Ta2O5 structures and obtain information on the electronic structure of the Ta2O5 layer and on the properties of the SiO2–Ta2O5 interface is shows. A model of the electronic structure of the Ta2O5 layer formed by molecular layer deposition is proposed, which explains the spectral distribution of luminescence independently of the method of its excitation. It is shown that the formation of a Ta2O5 layer on the surface of thermally oxidized silicon is accompanied by transformation in the near-surface SiO2 layer and by quenching of the luminescence band in the spectral region of 650 nm.

KW - electroluminescence

KW - electronic structure

KW - molecular layer deposition

KW - spectral distribution

KW - CATHODOLUMINESCENCE

UR - http://www.scopus.com/inward/record.url?scp=85083986445&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/2ece1439-bd37-3082-aee6-d26e3acba2d0/

U2 - 10.1134/S0030400X20020046

DO - 10.1134/S0030400X20020046

M3 - Article

VL - 128

SP - 220

EP - 223

JO - OPTICS AND SPECTROSCOPY

JF - OPTICS AND SPECTROSCOPY

SN - 0030-400X

IS - 2

ER -

ID: 53135495