DOI

Herein, the investigation of radiation-induced defects generated in the Al/SiO2/p-type FZ Si surface barrier detector upon irradiation with α-particles at room temperature using capacitance−voltage (C−V) and current deep-level transient spectroscopy (IDLTS) methods is conducted. The carried out C−V measurements indicate the formation of at least 8 × 1012 cm−3 radiation-induced acceptor traps at the depth fairly close to that where, according to TRIM simulations, the highest concentration of vacancy-interstitial pairs is created by the incoming α-particles. The studies conducted by the current DLTS technique allow to relate the observed increase in the acceptor concentration with the near-midgap level at E V + 0.56 eV. This level can apparently be associated with V2O defects recognized previously to be responsible for the space−charge sign inversion in the irradiated n-type Si detectors.

Original languageEnglish
Article number2100212
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume218
Issue number23
Early online date23 Jun 2021
DOIs
StatePublished - Dec 2021

    Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Surfaces and Interfaces

    Research areas

  • deep-level transient spectroscopy, radiation-induced defects, semiconductor detectors, silicon, α-particles, SILICON, alpha-particles, DAMAGE

ID: 86152377