Electrical properties of InGaN nanostructures with branched morphology synthesized via MBE on p-type Si(111)

DOI

https://doi.org/10.1088/1742-6596/1695/1/012030
Final published version

V. O. Gridchin
K. P. Kotlyar
R. R. Reznik
B. R. Borodin
D. A. Kudryashov
P. A. Alekseev
G. E. Cirlin

The work is devoted to the study of electrical properties of InGaN nanostructures with branched morphology (NSs) on p-type Si substrates. It was found that the IV curves between InGaN NSs and p-Si are close to linear, which could indicate a tunneling conductivity. Such unique structures as InGaN NSs on p-Si can be used as building blocks for water splitting devices and tandem solar cells.

Original language	English
Article number	012030
Journal	Journal of Physics: Conference Series
Volume	1695
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/1695/1/012030
State	Published - 28 Dec 2020
Event	7th International School and Conference "SaintPetersburg OPEN 2020" on Optoelectronics, Photonics, Engineering and Nanostructures - Saint Petersburg, Russian Federation Duration: 27 Apr 2020 → 30 Apr 2020

Scopus subject areas

Physics and Astronomy(all)

ID: 97045455