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Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes. / Trushin, M.; Vyvenko, O.; Mchedlidze, T.; Reiche, M.; Kittler, M.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, No. 4, 2011, p. 1371-1376.

Research output: Contribution to journal › Article

Harvard

Trushin, M, Vyvenko, O, Mchedlidze, T, Reiche, M & Kittler, M 2011, 'Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 8, no. 4, pp. 1371-1376. https://doi.org/DOI: 10.1002/pssc.201084029

APA

Trushin, M., Vyvenko, O., Mchedlidze, T., Reiche, M., & Kittler, M. (2011). Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(4), 1371-1376. https://doi.org/DOI: 10.1002/pssc.201084029

Vancouver

Trushin M, Vyvenko O, Mchedlidze T, Reiche M, Kittler M. Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes. Physica Status Solidi (C) Current Topics in Solid State Physics. 2011;8(4):1371-1376. https://doi.org/DOI: 10.1002/pssc.201084029

Author

Trushin, M. ; Vyvenko, O. ; Mchedlidze, T. ; Reiche, M. ; Kittler, M. / Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2011 ; Vol. 8, No. 4. pp. 1371-1376.

BibTeX

@article{99ea4fd425c94d769d4401e0e91ff5df,
title = "Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes",
author = "M. Trushin and O. Vyvenko and T. Mchedlidze and M. Reiche and M. Kittler",
year = "2011",
doi = "DOI: 10.1002/pssc.201084029",
language = "не определен",
volume = "8",
pages = "1371--1376",
journal = "Physica Status Solidi C: Conferences",
issn = "1862-6351",
publisher = "Wiley-Blackwell",
number = "4",

}

RIS

TY - JOUR

T1 - Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes

AU - Trushin, M.

AU - Vyvenko, O.

AU - Mchedlidze, T.

AU - Reiche, M.

AU - Kittler, M.

PY - 2011

Y1 - 2011

U2 - DOI: 10.1002/pssc.201084029

DO - DOI: 10.1002/pssc.201084029

M3 - статья

VL - 8

SP - 1371

EP - 1376

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 4

ER -

ID: 5476976