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Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes
Research output
:
Contribution to journal
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Article
Department of Solid State Electronics
Overview
Cite this
DOI
https://doi.org/DOI: 10.1002/pssc.201084029
Other version
M. Trushin
O. Vyvenko
T. Mchedlidze
M. Reiche
M. Kittler
Original language
Undefined
Pages (from-to)
1371-1376
Journal
Physica Status Solidi (C) Current Topics in Solid State Physics
Volume
8
Issue number
4
DOIs
https://doi.org/DOI: 10.1002/pssc.201084029
State
Published -
2011
ID: 5476976