Research output: Contribution to journal › Article › peer-review
Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures. / Kalygina, Vera M.; Tsymbalov, Alexander V.; Korusenko, Petr M.; Koroleva, Aleksandra V.; Zhizhin, Evgeniy V.
In: Crystals, Vol. 14, No. 3, 268, 09.03.2024.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures
AU - Kalygina, Vera M.
AU - Tsymbalov, Alexander V.
AU - Korusenko, Petr M.
AU - Koroleva, Aleksandra V.
AU - Zhizhin, Evgeniy V.
PY - 2024/3/9
Y1 - 2024/3/9
N2 - Resistive metal/β-Ga2O3/metal structures with different interelectrode distances and electrode topologies were investigated. The oxide films were deposited by radio-frequency magnetron sputtering of a Ga2O3 (99.999%) target onto an unheated sapphire c-plane substrate (0001) in an Ar/O2 gas mixture. The films are sensitive to ultraviolet radiation with wavelength λ = 254. Structures with interdigital electrode topology have pronounced persistent conductivity. It is shown that the magnitude of responsivity, response time τr, and recovery time τd are determined by the concentration of free holes p involved in recombination processes. For the first time, it is proposed to consider hole trapping both by surface states Nts at the metal/Ga2O3 interface and by traps in the bulk of the film.
AB - Resistive metal/β-Ga2O3/metal structures with different interelectrode distances and electrode topologies were investigated. The oxide films were deposited by radio-frequency magnetron sputtering of a Ga2O3 (99.999%) target onto an unheated sapphire c-plane substrate (0001) in an Ar/O2 gas mixture. The films are sensitive to ultraviolet radiation with wavelength λ = 254. Structures with interdigital electrode topology have pronounced persistent conductivity. It is shown that the magnitude of responsivity, response time τr, and recovery time τd are determined by the concentration of free holes p involved in recombination processes. For the first time, it is proposed to consider hole trapping both by surface states Nts at the metal/Ga2O3 interface and by traps in the bulk of the film.
KW - gallium oxide
KW - MSM structures
KW - UV radiation
KW - traps
KW - persistent conductivity
KW - RFMS
UR - https://www.mendeley.com/catalogue/12ae04eb-9162-3346-a61d-383a34ce50c7/
U2 - 10.3390/cryst14030268
DO - 10.3390/cryst14030268
M3 - Article
VL - 14
JO - Crystals
JF - Crystals
SN - 2073-4352
IS - 3
M1 - 268
ER -
ID: 117580426